4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
Year: 2009
Type: article
Abstract: 4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) of 10 A/1.7 kV rating were fabricated and characterized. Suitable design of a drift layer and a junction termination realized stable avalanche breakdown of 1.8 kV. Relatively low on-resistances of 8.3 mΩ cm 2 for the MOSFET and 2.2 mΩ cm 2 for the SBD were successfully recorded. Temperature dependence of the static characteristics of the SBD showed positive temperature coefficient in both the avalanche breakdown voltage and the differential on-resistance. The MOSFET and SBD were assembled into an SiC module. Its dynamic characterization revealed that the switching loss reduction in the SiC module was as much as 86% in comparison with that of the conventional Si counterpart under a moderate switching condition.
Authors: Naruhisa Miura, Shohei Yoshida, Yukiyasu Nakao, Yoshinori Matsuno, Ken-ichi Kuroda, Shoyu Watanabe, Masayuki Imaizumi, Hiroaki Sumitani, Hidekazu Yamamoto, Tatsuo Oomori
Institution: Mitsubishi Electric (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2093797495