Work

40mΩ / 1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications

Year: 2014

Type: article

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.778-780.911

Authors: Atsushi Ohoka, Nobuyuki Horikawa, Tsutomu Kiyosawa, Haruyuki Sorada, Masao Uchida, Yoshihiko Kanzawa, Kazuyuki Sawada, Tetsuzo Ueda, Eiji Fujii

Institution: Panasonic (Japan)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2057233329

FWCI: 1.135

Cites:

Cited by: 15

Related to: 9