Author

Brett Z. Nosho

Observed names: B NOSHO, B. Nosho, B. Z. Nosho, B.Z Nosho, B.Z. Nosho, Brett Nosho

Institution: HRL Laboratories (United States)

Observed institutions: United States Naval Research Laboratory, University of California, Santa Barbara, University of Houston - Downtown, HRL Laboratories (United States), University of Washington

OpenAlex ID: A5000732917

Island Scaling in Strained Heteroepitaxy: InAs/GaAs(001)

1995 · V. Bressler-Hill, S. Varma, et al. · Physical Review Letters · 122

HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection

2004 · E. P. G. Smith, L. T. Pham, et al. · Journal of Electronic Materials · 76

Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers

2000 · W. Barvosa-Carter, A. S. Bracker, et al. · Physical Review Letters · 69

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Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices

2002 · T. Borca-Tasciuc, D. W. Song, et al. · Journal of Applied Physics · 66

Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates

2002 · B.Z Nosho, B.R Bennett, et al. · Journal of Crystal Growth · 45

Effects of As2 versus As4 on InAs/GaSb heterostructures: As-for-Sb exchange and film stability

2001 · B. Z. Nosho, B. R. Bennett, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 45

Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors

2006 · E. P. G. Smith, E. A. Patten, et al. · Journal of Electronic Materials · 43

Third generation FPA development status at Raytheon Vision Systems (Invited Paper)

2005 · W. A. Radford, E. A. Patten, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 42

Advances in III-V based dual-band MWIR/LWIR FPAs at HRL

2017 · Pierre-Yves Delaunay, Brett Z. Nosho, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 40

Interpreting interfacial structure in cross-sectional STM images of III–V semiconductor heterostructures

2000 · B.Z. Nosho, W. Barvosa-Carter, et al. · Surface Science · 40

Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition

1999 · B. Z. Nosho, W. H. Weinberg, et al. · Applied Physics Letters · 40

Time-resolved photoluminescence in anodically etched silicon

1992 · T. P. Pearsall, Jeff C. Adams, et al. · Journal of Applied Physics · 24

3rdgeneration 1280 x 720 FPA development status at Raytheon Vision Systems

2006 · D. F. King, W. A. Radford, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 23

Structure of InAs/AlSb/InAs resonant tunneling diode interfaces

1998 · B. Z. Nosho, W. H. Weinberg, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 23

Comparison of light emission from stain-etch and anodic-etch silicon films

1992 · J. N. Kidder, P. S. Williams, et al. · Applied Physics Letters · 22

Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice

2002 · B. Z. Nosho, B. R. Bennett, et al. · Applied Physics Letters · 21

Status of two-color and large format HgCdTe FPA technology at Raytheon Vision Systems

2006 · E. P. G. Smith, R. E. Bornfreund, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 19

Electronic versus geometric contrast in cross-sectional STM images of III-V semiconductor heterostructures

2003 · S. G. Kim, S. C. Erwin, et al. · Physical review. B, Condensed matter · 19

Characterization of AlSb/InAs surfaces and resonant tunneling devices

1999 · B. Z. Nosho, W. H. Weinberg, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 19

Engineered heterostructures of 6.1-Angstrom III-V semiconductors for advanced electronic and optoelectronic applications

1999 · Benjamin V. Shanabrook, W. Barvosa-Carter, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 18

Barrier roughness effects in resonant interband tunnel diodes

2001 · R. Magno, A. S. Bracker, et al. · Journal of Applied Physics · 16

Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors

2004 · R. A. Coussa, A. M. Gallagher, et al. · Journal of Electronic Materials · 15

Bright visible photoluminescence in thin silicon films

1992 · T.P. Pearsall, Jeff C. Adams, et al. · Thin Solid Films · 15

Two-color HgCdTe infrared staring focal plane arrays

2003 · Edward P. Smith, Le T. Pham, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 14

Lateral composition modulation in InAs/GaSb superlattices

2002 · D. W. Stokes, R. L. Forrest, et al. · Journal of Applied Physics · 14

Works count: 58

Citation count: 1,037

H-index: 19

I10-index: 30