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Author

Laurent Clavelier

Advances, challenges and opportunities in 3D CMOS sequential integration
2011 · P. Batude, M. Vinet, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 164
Germanium-on-insulator (GeOI) substrates—A novel engineered substrate for future high performance devices
2006 · Takeshi Akatsu, Chrystel Deguet, et al. · Materials Science in Semiconductor Processing · 136
Epitaxial growth of Ge thick layers on nominal and 6° off Si(0 0 1); Ge surface passivation by Si
2009 · J M Hartmann, A Abbadie, et al. · Semiconductor Science and Technology · 99
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An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization
2011 · L. Di Cioccio, P. Gueguen, et al. · Journal of The Electrochemical Society · 96
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Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator
2009 · D. Kazazis, P. Jannaty, et al. · Applied Physics Letters · 88
Copper Direct-Bonding Characterization and Its Interests for 3D Integration
2009 · Pierric Gueguen, Léa Di Cioccio, et al. · Journal of The Electrochemical Society · 78
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3D monolithic integration: Technological challenges and electrical results
2010 · M. Vinet, P. Batude, et al. · Microelectronic Engineering · 76
Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains
2004 · J.M Hartmann, L Clavelier, et al. · Journal of Crystal Growth · 74
High quality Germanium-On-Insulator wafers with excellent hole mobility
2007 · Q.T. Nguyen, J.F. Damlencourt, et al. · Solid-State Electronics · 71
Physics of direct bonding: Applications to 3D heterogeneous or monolithic integration
2009 · Pierric Gueguen, Caroline Ventosa, et al. · Microelectronic Engineering · 58
Full characterization of Cu/Cu direct bonding for 3D integration
2010 · Rachid Taibi, Lea Di Cioccio, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 55
Static and Dynamic TCAD Analysis of IMOS Performance: From the Single Device to the Circuit
2006 · F. Mayer, C. Le Royer, et al. · IEEE Transactions on Electron Devices · 54
Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates
2003 · J.M. Hartmann, A. Abbadie, et al. · Journal of Crystal Growth · 51
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Enabling technologies for 3D chip stacking
2008 · Patrick Leduc, Lea Di Cioccio, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 49
Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study
2007 · B Vincent, J-F Damlencourt, et al. · Semiconductor Science and Technology · 49
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Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks
2007 · P. Batude, X. Garros, et al. · Journal of Applied Physics · 48
Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique
2007 · B. Vincent, J.-F. Damlencourt, et al. · Applied Physics Letters · 48
Large electromechanical coupling factor film bulk acoustic resonator with X-cut LiNbO3 layer transfer
2009 · M. Pijolat, S. Loubriat, et al. · Applied Physics Letters · 44
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High-resolution photoelectron spectroscopy of Ge-based HfO2 gate stacks
2007 · O. Renault, L. Fourdrinier, et al. · Applied Physics Letters · 44
Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band
2010 · Damien Bordel, Denis Guimard, et al. · Applied Physics Letters · 42
Copper direct bonding for 3D integration
2008 · Pierric Gueguen, Lea di Cioccio, et al. · IEEE International Interconnect Technology Conference (IITC) · 42
Copper direct bonding: An innovative 3D interconnect
2010 · Pierric Gueguen, Lea Di Cioccio, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 39
High performance 70nm gate length germanium-on-insulator pMOSFET with high-k/metal gate
2009 · K. Romanjek, L. Hutin, et al. · Solid-State Electronics · 39
Silicon-On-Diamond layer integration by wafer bonding technology
2010 · M. Rabarot, J. Widiez, et al. · Diamond and Related Materials · 38
Recent developments of Cu-Cu non-thermo compression bonding for wafer-to-wafer 3D stacking
2010 · I. Radu, D. Landru, et al. · IEEE International D Systems Integration Conference · 36
Works count: 140
Citation count: 2,635
H-index: 31
I10-index: 67
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