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Luis Felipe Giles

Formation energies and relative stability of perfect and faulted dislocation loops in silicon
2000 · F. Cristiano, J. Grisolia, et al. · Journal of Applied Physics · 106
Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion
1999 · A. Claverie, L.F. Giles, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 83
A new chemical etch for defects studies in very thin film (< 1000 Å) SIMOX material
1993 · L.F. Giles, A. Nejim, et al. · Materials Chemistry and Physics · 17
Point defect injection during nitrous oxidation of silicon at low temperatures
2000 · D. Skarlatos, D. Tsoukalas, et al. · Journal of Applied Physics · 13
Transient enhanced diffusion of B at low temperatures under extrinsic conditions
2005 · L.F. Giles, B. Colombeau, et al. · Solid-State Electronics · 9
Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients
1999 · L.F Giles, M Omri, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 7
Crystallographic defect studies in SIMOX material thinned by sacrificial oxidation
1994 · L.F. Giles, C.D. Marsh, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
New etchant for crystallographic defect studies in thin SOI materials (<1000 Å)
1993 · L.F. Giles, A. Nejim, et al. · Electronics Letters · 6
Process optimisation for direct formation of device worthy thin film SIMOX structures using 90 keV oxygen implantation
1993 · A. Nejim, Y. Li, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
Photoluminescence of Extended Defects in Silicon-on-Insulator Formed by Implantation of Oxygen
1995 · Y. H. Qian, J. H. Evans, et al. · MRS Proceedings · 5
Process-Induced Diffusion Phenomena in Advanced CMOS Technologies
2006 · Peter Pichler, Alexander Burenkov, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 4
An investigation of the role of the time averaged ion beam current density upon the defect densities in thin film SIMOX
1994 · A. Nejim, C.D. Marsh, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 4
Delineation of defects in SIMOX structures using a chemical etching technique
1992 · L F Giles, A Nejim, et al. · Vacuum · 4
Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates
1999 · Luis Felipe Giles, Yasuo Kunii · Journal of Electronic Materials · 3
Characterization of crystallographic defects in thermally oxidized SIMOX materials
1996 · Luis Felipe Giles, Yasuo Kunii · Materials Science and Engineering B · 3
Electrical and optical characterization of extended defects in SIMOX structures
1996 · Y H Qian, J H Evans, et al. · Semiconductor Science and Technology · 3
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On the role of nanocavities in suppressing boron transient enhanced diffusion and deactivation in F+ coimplanted silicon
2008 · Luis Felipe Giles, Chris Stapelmann, et al. · Journal of Applied Physics · 2
Process-Induced Diffusion Phenomena in Advanced CMOS Technologies
2006 · Peter Pichler, Alexander Burenkov, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 1
Nucleation, growth and retrogrowth of oxidation induced stacking faults in thin silicon-on-insulator
1999 · Luis Felipe Giles, Yasuo Kunii, et al. · Journal of Electronic Materials · 1
Estimation of the Number of Injected Interstitial Atoms during Nitrous Oxidation of Silicon
1999 · D. Skarlatos, L.F. Giles, et al. · MRS Proceedings · 1
Identification of Optimal Doses for Device Quality Thin-Film and Standard Simox Structures Formed by Low (50keV, 70keV or 90keV) or High (200keV) Energy Oxygen Implantation
2005 · C.D. Marsh, G.R. Booker, et al. · IEEE International SOI Conference (SOI)
Formation of oxidation induced stacking sacrificial thinning of SIMOX materials
2002 · L.F. Giles, A. Nejim, et al. · IEEE International SOI Conference (SOI)
Growth and retrogrowth of oxidation induced stacking faults (OISF) in SIMOX
2002 · L.F. Giles, Y. Kunii, et al. · IEEE International SOI Conference (SOI)
A Comparison Between Point Defect Injecting Processes in Silicon Using Extended Defects and Dopant Marker Layers as Point Defect Detectors
2001 · D. SKARLATOS, D. TSOUKALAS, et al. · International Conference on Microelectronics, Microsystems and Nanotechnology (MMN)
Evolution of Extended Defects in High Temperature (T＞1150℃) Oxidized SIMOX
1996 · Luis Felipe GILES, Yasuo KUNII · International Conference on Solid State Devices and Materials (SSDM)
Works count: 27
Citation count: 284
H-index: 6
I10-index: 4
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