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Michele Robino
Observed names:
M Robino,
M. Robino,
Michèle Robino
Institutions:
Centre National de la Recherche Scientifique,
Institut de Physique et Chimie des Matériaux de Strasbourg
Observed institutions:
Centre National de la Recherche Scientifique,
Forschungszentrum Jülich,
Technion – Israel Institute of Technology,
Institut de Physique et Chimie des Matériaux de Strasbourg
OpenAlex ID:
A5071947321
Preparation and characterization of Zn4Sb4
1985
·
M. Tapiero
, S. Tarabichi
, et al.
·
Solar Energy Materials
·
83
Laser Induced Absorption of CuCl Microcrystallites in a Glass Matrix
1989
·
P. Gilliot
, J. C. Merle
, et al.
·
physica status solidi (b)
·
28
The effects of KrF pulsed laser and thermal annealing on the crystallinity and surface morphology of radiofrequency magnetron sputtered ZnS:Mn thin films deposited on Si
1999
·
E. A. Mastio
, M. R. Craven
, et al.
·
Journal of Applied Physics
·
20
Structural and optical characteristics of pulsed laser deposited ZnSe epilayers
1996
·
A. Chergui
, J.L. Deiss
, et al.
·
Applied Surface Science
·
14
Amorphous thin films of Zn3P2: Preparation and characterization
1986
·
J. L. Deiss
, B. Elidrissi
, et al.
·
Applied Physics Letters
·
13
Progress in melt growth of Cu2O
1980
·
J.L. Loison
, M. Robino
, et al.
·
Journal of Crystal Growth
·
13
Amorphous thin films of Zn3P2
1988
·
J L Deiss
, B Eli-Drissi
, et al.
·
Physica Scripta
·
12
PDF
Optical characterization of pure ZnSe epilayers grown by metal organic vapour-phase epitaxy
1994
·
A Chergui
, J Valenta
, et al.
·
Semiconductor Science and Technology
·
11
Preparation of optical quality ZnCdTe thin films by vacuum evaporation
1998
·
Raoul Weil
, Marguerite Joucla
, et al.
·
Applied Optics
·
10
EXAFS study of the local structure in compounds
1991
·
C. Levelut
, A. Ramos
, et al.
·
Materials Science and Engineering B
·
10
Pulsed laser deposition of epitaxial layers of ZnSe
1995
·
J.L. Deiss
, A. Chergui
, et al.
·
Applied Surface Science
·
8
Epitaxial growth of GaN thin films on sapphire (0001) by pulsed laser deposition: influence of surface preparation and nitridation
2001
·
J.L Deiss
, Ch Hirlimann
, et al.
·
Materials Science and Engineering B
·
7
Structural and Optical Properties of Cd1—xZnxTe Epilayers Grown on GaAs (001) by Pulsed Laser Deposition
1998
·
J. L. Deiss
, J. L. Loison
, et al.
·
physica status solidi (a)
·
4
Picosecond spectral hole burning in ZnCdTe layers
1996
·
M. Benhmida
, V. Netiksis
, et al.
·
Journal of Applied Physics
·
4
On The Excitonic Absorption Of CuCl Microcrystallites In A Glass Matrix Under High Resonant Excitation Conditions
1989
·
Pierre Gilliot
, Jean-Claude Merle
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
4
Properties of amorphous Zn3P2
1987
·
J.L. Deiss
, B. Eli Drissi
, et al.
·
Journal of Non-Crystalline Solids
·
4
Structural and optical characteristics of pulsed laser deposited ZnSe epilayers
1996
·
A. Chergui
, J.L. Deiss
, et al.
·
Elsevier eBooks
·
1
Caractérisation structurale par XRD et RHEED de couches minces épitaxiées de GaN déposées sur Al2O3(0001) par ablation laser réactive
2000
·
D. Ohlmann
, J. L. Deiss
, et al.
·
Journal de Physique IV (Proceedings)
Caractérisation structurale et morphologique de couches minces épitaxiées de Cd1-xZnxTe déposées sur GaAs(001) par ablation laser
1998
·
J. L. Deiss
, J. L. Loison
, et al.
·
Journal de Physique IV (Proceedings)
Growth of epitaxial ZnSe and Cd 1-x Zn x Te films on (100)GaAs by laser ablation
1998
·
Jean L. Deiss
, Jean-Luc Loison
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Optical nonlinear properties of Cd1−xZnxTe epilayers grown on (100) GaAs by pulsed laser deposition
1998
·
D. Ohlmann
, J.L. Deiss
, et al.
·
Thin Solid Films
Growth of CdSe clusters by laser ablation and mass spectroscopy of ion flow
1998
·
A. Mazeikis
, J. Miskinis
, et al.
·
AIP conference proceedings
Caractérisation structurale et morphologique de couches minces épitaxiées de ZnSe déposées sur GaAs
1996
·
M. Robino
, A. Chergui
, et al.
·
Journal de Physique IV (Proceedings)
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Works count:
23
Citation count:
246
H-index:
10
I10-index:
10
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