Author

J.C. Roussin

Observed names: J. C. Roussin, J.-C. Roussin, J.-c. Roussin

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information

Observed institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Direction de la Recherche Technologique, Laboratoire d'Électronique des Technologies de l'Information

OpenAlex ID: A5083240366

InP dies transferred onto silicon substrate for optical interconnects application

2005 · M. Kostrzewa, L. Di Cioccio, et al. · Sensors and Actuators A Physical · 44

Silicon-On-Diamond layer integration by wafer bonding technology

2010 · M. Rabarot, J. Widiez, et al. · Diamond and Related Materials · 38

Fabrication of Silicon on Diamond (SOD) substrates by either the Bonded and Etched-back SOI (BESOI) or the Smart-Cut™ technology

2009 · J. Widiez, M. Rabarot, et al. · Solid-State Electronics · 26

III-V solar cell growth on wafer-bonded GaAs/Si-substrates

2006 · J. Schone, F. Dimroth, et al. · World Conference on Photovoltaic Energy Conversion · 14

High dose implantations of antimony for buried layer applicationsrrr

1980 · J. P. Gailliard, M. Dupuy, et al. · Radiation Effects · 2

A comparative study of three designs of 0.10 um NMOSFETs processed with heavy ion implanted pocket

1997 · G. Guégan, S. Deleonibus, et al. · European Solid-State Device Research Conference

High-performance 0.5µm n -MOS technology with thin nitrided oxide as gate dielectric

1989 · J. Camargo Da Costa, G. Guegan, et al. · Electronics Letters

Works count: 7

Citation count: 124

H-index: 4

I10-index: 4