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M. Gerhardt

Observed name: M Gerhardt
Observed institution: IBM (United States)
ORCID: 0009-0008-8203-4680
Observed ORCID: 0009-0008-8203-4680
OpenAlex ID: A5084887428
High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell
2005 · E. Leobandung, H. Nayakama, et al. · Symposium on VLSI Technology · 63
Integration and optimization of embedded-sige, compressive and tensile stressed liner films, and stress memorization in advanced SOI CMOS technologies
2005 · L.T. Su, J. Pellerin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 62
Multiple Stress Memorization In Advanced SOI CMOS Technologies
2007 · A. Wei, M. Wiatr, et al. · Symposium on VLSI Technology · 40
Process Integration Issues with Spike, Flash and Laser Anneal Implementation for 90 and 65 NM Technologies
2006 · Th. Feudel, M. Horstmann, et al. · International Conference on Advanced Thermal Processing of Semiconductors · 10
Sub-50nm gate length SOI transistor development for high performance microprocessors
2004 · M. Horstmann, D. Greenlaw, et al. · Materials Science and Engineering B · 9
Temperature scaling for 35nm gate length high-performance CMOS
2004 · Th. Feudel, M. Horstmann, et al. · Materials Science in Semiconductor Processing · 3
Reduced Parameter Fluctuation with Laser and Flash Lamp Anneal for 65nm Volume Production
2007 · Thomas Feudel, B Bayha, et al. · ECS Transactions · 2
Advanced transistor structures for high performance microprocessors
2004 · M. Horstmann, D. Greenlaw, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 2
Works count: 8
Citation count: 191
H-index: 5
I10-index: 4
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