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H.‐J. Hinneberg

Observed names: H. J. Hinneberg, H.- J. Hinneberg, H.-J Hinneberg, H.-J. Hinneberg, H.J Hinneberg, H.J. Hinneberg, HJ Hinneberg, Hans-Jürgen Hinneberg
OpenAlex ID: A5110028908
Structure and properties of quasi-amorphous films prepared by ion beam techniques
1980 · C. Weissmantel, K. Bewilogua, et al. · Thin Solid Films · 258
Growth of MnSi1.7 on Si(001) by MBE
2001 · S Teichert, S Schwendler, et al. · Journal of Crystal Growth · 41
Surfactant mediated growth of MnSi1.7 on Si(001)
2001 · S. Teichert, H. Hortenbach, et al. · Applied Physics Letters · 26
Real structure of the CoSi2∕Si(001) interface studied by dedicated aberration-corrected scanning transmission electron microscopy
2005 · Meiken Falke, Uwe Falke, et al. · Applied Physics Letters · 25
Preparation and properties of MnSi1.7 on Si(001)
2001 · S. Teichert, D.K. Sarkar, et al. · Microelectronic Engineering · 20
Hot-filament-grown diamond films on Si: characterization of impurities
1992 · H.-J. Hinneberg, M. Eck, et al. · Diamond and Related Materials · 19
Electron microscopic investigation of MnSi1.7 layers on Si(001)
2002 · A Mogilatenko, M Falke, et al. · Microelectronic Engineering · 17
The growth of an intermediate CoSi phase during the formation of epitaxial CoSi2 by solid phase reaction
1998 · M Falke, B Gebhardt, et al. · Thin Solid Films · 17
Deposition of diamond on patterned silicon substrates
1995 · A. Flöter, G. Schaarschmidt, et al. · Diamond and Related Materials · 16
Electrical properties of ion beam sputtered silicon layers on spinel
1976 · H.J. Hinneberg, M. Weidner, et al. · Thin Solid Films · 15
Deposition of epitaxial layers by ion beam methods
1980 · C. Weissmantel, G. Hecht, et al. · Journal of Vacuum Science and Technology · 14
Surfactant mediated growth of MnSi1.7 layers on (001)Si
2002 · A. Mogilatenko, M. Falke, et al. · Microelectronic Engineering · 13
Epitaxial CoSi2 by solid phase reaction of Co/Ti and Co/Hf bilayers on Si(001)
2001 · M. Falke, B. Gebhardt, et al. · Microelectronic Engineering · 13
A pronounced hysteresis effect observed in hall measurements on β-FeSi2 single crystals at 4.2 K
1995 · S. Teichert, G. Beddies, et al. · physica status solidi (a) · 13
Role of buried ultra thin interlayer silicide on the growth of Ni film on Si(100) substrate
2000 · D.K. Sarkar, M. Falke, et al. · Applied Physics A · 12
Influence of Al on the growth of NiSi2 on Si(001)
2005 · F. Allenstein, L. Budzinski, et al. · Microelectronic Engineering · 11
Structure, interface roughness, and growth mechanism of reactive deposition epitaxy of CoSi2 on Si(100) substrates
2001 · D. K. Sarkar, I. Rau, et al. · Applied Physics Letters · 10
Structure of thin CrSi2 films on Si(0 0 1)
2004 · O Filonenko, M Falke, et al. · Applied Surface Science · 8
Surfactant mediated growth of silicides
2002 · S Teichert, H Hortenbach, et al. · Microelectronic Engineering · 7
Role of a buried ultrathin amorphous interlayer on the growth of Co films on different metal substrates
2001 · D. K. Sarkar, M. Falke, et al. · Journal of Applied Physics · 7
Structure and properties of CrSi2/Si multilayers
2004 · D. Decker, E. Loos, et al. · Microelectronic Engineering · 6
Epitaxial growth of CrSi2 on Si(001) by template technique
2003 · O Filonenko, A Mogilatenko, et al. · Journal of Crystal Growth · 5
Allotaxy in the Ni–Si system
1998 · S Teichert, M Falke, et al. · Thin Solid Films · 5
Epitaxial CoSi2 formation by Co/Hf bilayers on Si(100)
1997 · B. Gebhardt, M. Falke, et al. · Microelectronic Engineering · 5
Diamond growth in and above trenches in silicon
1997 · G. Schaarschmidt, B. Mainz, et al. · Diamond and Related Materials · 5
Works count: 49
Citation count: 622
H-index: 13
I10-index: 17
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