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Morikazu Konishi
Observed names:
M. Konishi,
Morikazu KONISHI
Institutions:
Corning (United States),
Nissin Ion Equipment Co., Ltd. (Japan)
Observed institutions:
Tokyo Institute of Technology,
Corning (United States),
Sony Corporation (United States),
Sony (Japan),
Nissin Ion Equipment Co., Ltd. (Japan),
Nissin Electric Co., Ltd. (Japan)
show all 6
OpenAlex ID:
A5110079314
Performance of the new high mass resolution time of flight atom probe
1981
·
Osamu Nishikawa
, Kazuaki Kurihara
, et al.
·
Review of Scientific Instruments
·
53
Binding states of Ga and Sn on W and Mo: Structures, evaporation field and its temperature dependence
1980
·
M. Wada
, M. Konishi
, et al.
·
Surface Science
·
21
Polarizabilities and binding energies of Ga on W and post-field-ionization of Ga
1981
·
M. Konishi
, M. Wada
, et al.
·
Surface Science
·
20
FIM observations of W, Ga and Sn structures on W and Mo {001} surfaces
1980
·
O. Nishikawa
, M. Wada
, et al.
·
Surface Science
·
12
Characteristics of a helium field ion gun
1988
·
Morikazu Konishi
, Masaaki Takizawa
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
·
8
Electron Beam Induced Damage of MOS Gate Oxide
1998
·
Morikazu Konishi
, Michitaka Kubota
, et al.
·
Japanese Journal of Applied Physics
·
4
Studies on correction accuracy of proximity effect for the pattern area density method in electron beam direct writing
1996
·
Takashi Kasuga
, Morikazu Konishi
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
4
Reply to the comments by D.R. Kingham on “polarizabilities and binding energies of Ga on W and post-field-ionization of Ga”
1981
·
M. Konishi
, M. Wada
, et al.
·
Surface Science
·
3
Nissin Ion Doping System—H[sub 2]+] Implantation for Silicon Layer Exfoliation
2011
·
S. Cherekdjian
, R. O. Maschmeyer
, et al.
·
AIP conference proceedings
·
1
A Focused He+ Ion Beam with a High Angular Current Density
1992
·
Hiroshi Hiroshima
, Masanori Komuro
, et al.
·
Japanese Journal of Applied Physics
·
1
PDF
Large diameter ion beam implantation system
1987
·
K. Matsuda
, F. Fukumaru
, et al.
·
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
·
1
Sputtering of Metals with 20 keV O2 +; Characteristic Etch Patterns, Sputtered Atom Yields and Secondary Ion Mass Spectra
1982
·
K. Tsunoyama
, T. Suzuki
, et al.
·
Springer series in chemical physics
·
1
Erratum to : The Measurement of Mean Sojourn Time of Molecules in Practical Vacuum Systems
1980
·
Morikazu KONISHI
, Minoru WADA
, et al.
·
Shinku
·
1
PDF
Electron Beam Induced Damage of MOS Gate Oxide
1997
·
Morikazu Konishi
, Michitaka Kubota
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Performance of a Gas Phase Focused Ion Beam System : Lithography Technology :
1989
·
M. Konishi
, Masaaki Takizawa
·
JJAP series
Reply to the comments by D.R. Kingham on “polarizabilities and binding energies of Ga On W and post-field-ionization of Ga”
1981
·
M. Konishi
, M. Wada
, et al.
·
Surface Science Letters
Polarizabilities and binding energies of Ga on W and post-field-ionization of Ga
1981
·
M. Konishi
, M. Wada
, et al.
·
Surface Science Letters
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Works count:
17
Citation count:
130
H-index:
5
I10-index:
4
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