Work

Nissin Ion Doping System—H[sub 2]+] Implantation for Silicon Layer Exfoliation

Year: 2011

Type: conference-paper

Source: AIP conference proceedings

DOI: 10.1063/1.3548430

Authors: S. Cherekdjian, R. O. Maschmeyer, J. Cites, J. Tatemichi, Y. Inouchi, M. Onoda, K. Orihira, T. Matsumoto, M. Konishi, M. Naito, Jiro Matsuo, Masataka Kase, Takaaki Aoki, Toshio Seki

Institutions: Corning (United States), Nissin Ion Equipment Co., Ltd. (Japan)

Language: English

Topic: Ion-surface interactions and analysis

Subfield: Surfaces, Coatings and Films

Field: Materials Science

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2083385605

FWCI: 1.99

Cites: 4

Cited by: 1

Related to: 10