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Yutaka Inouchi

Observed names: Inouchi Yutaka, Y. Inouchi
OpenAlex ID: A5110138570
Extraction characteristics of a high current metal ion source
1992 · Yutaka Inouchi, Takatoshi Yamashita, et al. · Review of Scientific Instruments · 13
High-current metal ion beam extraction from a multicusp ion source
1990 · Yutaka Inouchi, Hideki Tanaka, et al. · Review of Scientific Instruments · 10
Development of high current metal ion beam source
1989 · Hiroshi Inami, Fumio Fukumaru, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 10
Activation of dopant in silicon by ion implantation under heating sample at 200 °C
2018 · Toshiyuki Sameshima, Keisuke Yasuta, et al. · Applied Physics A · 8
Ion species measurement of high current metal ion beams extracted from a multicusp ion source
1992 · Yasuhiro Matsuda, Hiroshi Inami, et al. · Review of Scientific Instruments · 8
Mass Filtering Function of Magnetic Boundaries in Multi-Cusp Ion Source
2011 · Yutaka Inouchi, Shojiro Dohi, et al. · AIP conference proceedings · 7
Ion sources for large area processing (invited)
2000 · M. Naito, Y. Ando, et al. · Review of Scientific Instruments · 6
Development of a high current and high energy metal ion beam system
1991 · H. Inami, Y. Inouchi, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
Ion sources for ion implantation technology (invited)
2014 · Shigeki Sakai, Nariaki Hamamoto, et al. · Review of Scientific Instruments · 5
Multi-cusp ion source for Gen 5.5 doping system
2012 · Yutaka Inouchi, Takeshi Matsumoto, et al. · AIP conference proceedings · 5
NISSIN iG5 implantation tool for generation 5.5 in the flat panel display industry
2012 · Takeshi Matsumoto, Katsuharu Imai, et al. · AIP conference proceedings · 5
Increase of Boron Ion Beam Current Extracted from a Multi-Cusp Ion Source in an Ion Doping System with Mass Separation
2008 · Yutaka Inouchi, Shojiro Dohi, et al. · AIP conference proceedings · 4
Increase of Beam Current Mass-Separated by Long Gap Dipole Sector Magnet for S/D Process in FPD manufacturing
2006 · Shojiro Dohi, Yasunori Ando, et al. · AIP conference proceedings · 3
Development of DC-PFG for a large size ion beam in ion doping system
2002 · S. Maeno, Y. Ando, et al. · International Conference on Ion Implantation Technology · 2
New control system of the multiple filaments in the large ion source for ion doping system iG6 Ver.2
2022 · Yuya Hirai, Kenji Watari, et al. · MRS Advances · 1
Phosphorus Followed by Hydrogen Two-Step Ion Implantation Used for Forming Low Resistivity Doped Silicon at 300°C
2019 · T. Nagao, Y. Inouchi, et al. · International Workshop on Active-Matrix Flatpanel Displays and Devices · 1
Neutralization of Electrical Static Charge under High Vacuum by Plasma Flood Gun
2018 · Tomokazu Nagao, Genki Takahashi, et al. · International Conference on Ion Implantation Technology · 1
Two-Step Ion Implantation used for Activating Boron Atoms in Silicon at 300°C
2018 · T. Nagao, T. Uehara, et al. · International Workshop on Active-Matrix Flatpanel Displays and Devices · 1
Improved Multi-Cusp Ion Source to Efficiently Extract B+ Beam and PHx+ Beam
2016 · Hiroaki Kai, Ippei Nishimura, et al. · International Conference on Ion Implantation Technology · 1
Development of Plasma Flood Gun for Gen 5.5 Implanter
2016 · Tomokazu Nagao, Taro Hayakawa, et al. · International Conference on Ion Implantation Technology · 1
Doping Process and Tool for Surface Treatment Using Large-Area Ion Beams
2016 · Yutaka Inouchi, Takeshi Matsumoto, et al. · International Conference on Ion Implantation Technology · 1
Multi-cusp ion source for doping process of flat panel display manufacturing
2014 · Yutaka Inouchi, Takeshi Matsumoto, et al. · Review of Scientific Instruments · 1
Nissin Ion Doping System—H[sub 2]+] Implantation for Silicon Layer Exfoliation
2011 · S. Cherekdjian, R. O. Maschmeyer, et al. · AIP conference proceedings · 1
Beam current control of an ECR ion source for medium current ion implanter
2003 · Y. Inouchi, S. Okuda, et al. · International Conference on Ion Implantation Technology · 1
The development of a beam line using an RFQ and 3-Gap RF accelerators for high energy ion implanter
2003 · H. Fujisawa, N. Hamamoto, et al. · International Conference on Ion Implantation Technology · 1
Works count: 44
Citation count: 104
H-index: 6
I10-index: 3
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