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H. Wendt

Nucleation and growth of γ′-Precipitates in Ni-14 at.% Al
1983 · h. Wendt, P. Haasen · Acta Metallurgica · 170
A novel capacitor technology based on porous silicon
1996 · V Lehmann, W Hönlein, et al. · Thin Solid Films · 110
Impact of copper contamination on the quality of silicon oxides
1989 · H. Wendt, H. Cerva, et al. · Journal of Applied Physics · 96
Development of different copper seed layers with respect to the copper electroplating process
2000 · K Weiss, S Riedel, et al. · Microelectronic Engineering · 59
Atom probe field ion microscopy of the decomposition of Cu-2.7at%Co
1985 · H. Wendt, P. Haasen · Scripta Metallurgica · 55
Mechanical properties of Cu-Fe alloys in the transition from solid solution to precipitation hardening
1982 · H. Wendt, R. Wagner · Acta Metallurgica · 43
Ferroelectric strontium bismuth tantalate thin films deposited by metalorganic chemical vapour deposition (MOCVD)
1999 · J.F Roeder, B.C Hendrix, et al. · Journal of the European Ceramic Society · 38
Atom probe field ion microscopy of a FeCrCo permanent magnet alloy
1982 · F. Zhu, H. Wendt, et al. · Scripta Metallurgica · 35
Diffusion of B and As from polycrystalline silicon during rapid optical annealing
1987 · H. J. Böhm, H. Wendt, et al. · Journal of Applied Physics · 30
SrBi2Ta2O9 ferroelectric thin film capacitors: degradation in a hydrogen ambient
2003 · W. Hartner, P. Bosk, et al. · Applied Physics A · 23
A 45 nm CMOS node Cu/Low-k/ Ultra Low-k PECVD SiCOH (k=2.4) BEOL Technology
2006 · S. Sankaran, S. Arai, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22
Defect-related gate oxide breakdown
1989 · W. Bergholz, W. Mohr, et al. · Materials Science and Engineering B · 22
Secondary dislocations in [011] tilt boundaries in germanium
1988 · W. Skrotzki, H. Wendt, et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 19
Properties of SrBi2Ta2O9 thin films grown by MOCVD for high density FeRAM applications
1998 · Frank Hintermaier, Bryan Hendrix, et al. · Integrated ferroelectrics · 18
Improvement of oxide quality by rapid thermal annealing
1990 · H. Wendt, A. Spitzer, et al. · Journal of Applied Physics · 17
Precipitation of Copper and Palladium at the SiO2/Silicon Interface
1988 · H. Cerva, H. Wendt · MRS Proceedings · 12
A novel low-temperature (Ba,Sr)TiO3 (BST) process with barrier for Gbit DRAM applications
1999 · G. Beitel, H. Wendt, et al. · Microelectronic Engineering · 10
Impact of Defects on the Technology of Highly Integrated Circuits
1989 · Bernd O. Kolbesen, Werner Bergholz, et al. · Materials science forum · 10
The relation between the structure and mechanical properties of A σ = 51 tilt boundary in germanium
1988 · W. Skrotzki, H. Wendt, et al. · Acta Metallurgica · 7
Sub Micron P-MOSFETs under Static and SWAP Stress
1987 · H.-M. Mühlhoff, P. Murkin, et al. · Symposium on VLSI Technology · 6
EUV mask development: material and process
2002 · Jenspeter Rau, Hermann Wendt, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Three‐Dimensional Defect Delineation in Trench Structures
1989 · H. Wendt, S. Sauter · Journal of The Electrochemical Society · 4
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FIM atomprobe studies of permanent magnets
1984 · F. Zhu, H. Wendt, et al. · IEEE Transactions on Magnetics · 4
Reply to the critique of “atom probe field ion microscopy of the decomposition of Cu-2.7at%CO” by legoues, MC devitt and Aaronson (LMA)
1986 · H. Wendt, P. Haasen, et al. · Scripta Metallurgica · 3
Field Ion Microscope and Atom Probe Techniques in the Study of Decomposition Processes
1984 · H. Wendt · Elsevier eBooks · 2
Works count: 43
Citation count: 827
H-index: 15
I10-index: 18
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