Author

Keiichi Tokutome

Observed names: K. Tokutome, Keiichi TOKUTOME

Institution: NEC (Japan)

Observed institution: NEC (Japan)

OpenAlex ID: A5111569901

GaAsSb: A novel material for 1.3 µm VCSELs

1998 · T. Anan, K. Nishi, et al. · Electronics Letters · 90

Continuous-wave operation of 1.30 µm GaAsSb/GaAsVCSELs

2001 · T. Anan, M. Yamada, et al. · Electronics Letters · 61

Room temperature low-threshold CW operationof 1.23 µm GaAsSb VCSELs on GaAs substrates

2000 · M. Yamada, T. Anan, et al. · Electronics Letters · 61

1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times

2012 · T. Ohsawa, H. Koike, et al. · Symposium on VLSI Circuits · 58

Highly Reliable High-Speed 1.1-$\mu$m-Range VCSELs With InGaAs/GaAsP-MQWs

2010 · H. Hatakeyama, T. Anan, et al. · IEEE Journal of Quantum Electronics · 53

Room-temperature pulsed operation of GaAsSb/GaAsvertical-cavity surface-emitting lasers

1999 · T. Anan, M. Yamada, et al. · Electronics Letters · 48

High-speed 1.1-μm-range InGaAs VCSELs

2008 · T. Anan, N. Suzuki, et al. · Optical Fiber Communication Conference · 45

Low-threshold operation of 1.3-/spl mu/m GaAsSb quantum-well lasers directly grown on GaAs substrates

2000 · M. Yamada, T. Anan, et al. · IEEE Photonics Technology Letters · 43

High Speed 1.1-.MU.m-Range InGaAs-Based VCSELs

2009 · Naofumi SUZUKI, Takayoshi ANAN, et al. · IEICE Transactions on Electronics · 40

High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasers

1999 · M. Yamada, T. Anan, et al. · IEEE Photonics Technology Letters · 29

Process-induced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with perpendicular magnetic easy axis

2014 · Keizo Kinoshita, Hiroaki Honjo, et al. · Japanese Journal of Applied Physics · 28

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High-quality InGaAs/InP multiquantum-wellstructures on Si fabricated by direct bonding

1994 · K. Mori, K. Tokutome, et al. · Electronics Letters · 28

1.1-/spl mu/m-range InGaAs VCSELs for high-speed optical interconnections

2006 · N. Suzuki, H. Hatakeyama, et al. · IEEE Photonics Technology Letters · 24

25 Gbit/s 100°C operation of highly reliable InGaAs/GaAsP-VCSELs

2008 · H. Hatakeyama, T. Akagawa, et al. · Electronics Letters · 23

1.3 µm InAsP/InAlGaAs MQW lasers for high-temperatureoperation

1997 · T. Anan, M. Yamada, et al. · Electronics Letters · 19

Low-threshold pulsed operation of long-wavelengthlasers on Sifabricated by direct bonding

1995 · K. Mori, K. Tokutome, et al. · Electronics Letters · 19

Low-threshold lasing at 1.3 μm from GaAsSb quantum wells directly grown on GaAs substrates

2002 · M. Yamada, T. Anan, et al. · IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS) · 17

Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion

2014 · Keizo Kinoshita, Hiroaki Honjo, et al. · Japanese Journal of Applied Physics · 16

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Spintronics primitive gate with high error correction efficiency 6(Perror)2 for logic-in memory architecture

2012 · Y. Tsuji, R. Nebashi, et al. · Symposium on VLSI Technology · 13

CW iodine-ion laser in a positive-column discharge

1974 · S. Hattori, H. Kano, et al. · IEEE Journal of Quantum Electronics · 13

High-speed InGaAs VCSELs

2006 · N. Suzuki, H. Hatakeyama, et al. · IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS) · 12

Low-threshold operation of 1.34-/spl mu/m GaInNAs VCSEL grown by MOVPE

2005 · M. Yamada, T. Anan, et al. · IEEE Photonics Technology Letters · 12

CW laser oscillation at 6127 Å in singly ionized iodine

1972 · G. Collins, H. Kuno, et al. · IEEE Journal of Quantum Electronics · 12

Electrical endurance of Co/Ni wire for magnetic domain wall motion device

2013 · S. Fukami, M. Yamanouchi, et al. · Applied Physics Letters · 10

240-Gb/s On-Board Optical Transmitters and Receivers

2010 · K. Yashiki, Y. Hashimoto, et al. · Optical Fiber Communication Conference · 9

Works count: 59

Citation count: 841

H-index: 17

I10-index: 24