Work

High-quality InGaAs/InP multiquantum-wellstructures on Si fabricated by direct bonding

Year: 1994

Type: article

Source: Electronics Letters

DOI: 10.1049/el:19940657

Authors: K. Mori, K. Tokutome, K. Nishi, S. Sugou

Institution: NEC (Japan)

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2170056580

FWCI: 2.369

Cites: 5

Cited by: 28

Related to: 10