Work

1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times

Year: 2012

Type: conference-paper

Source: Symposium on VLSI Circuits

DOI: 10.1109/vlsic.2012.6243782

Authors: T. Ohsawa, H. Koike, S. Miura, H. Honjo, K. Tokutome, S. Ikeda, T. Hanyu, H. Ohno, T. Endoh

Institutions: Tohoku University, NEC (Japan), Research Institute of Electrical Communication, Tohoku University

Language: English

Topic: Magnetic properties of thin films

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

OpenAlex ID: W2010561573

FWCI: 17.71

Cites:

Cited by: 58

Related to: 10