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Michikazu Matsumoto

Observed name: M. Matsumoto
Institution: Panasonic (Japan)
OpenAlex ID: A5111586080
Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2
2007 · Kazuo Tsutsui, Ruifei Xiang, et al. · Microelectronic Engineering · 17
Extremely Low Keff (1.9) Cu Interconnects with Air Gap Formed Using SiOC
2007 · T. Harada, A. Ueki, et al. · IEEE International Interconnect Technology Conference (IITC) · 16
SiO2 / Si Interfaces Studied by Scanning Tunneling Microscopy and High Resolution Transmission Electron Microscopy
1992 · M. Niwa, M. Matsumoto, et al. · Journal of The Electrochemical Society · 10
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Efficiency of power devices using full Cu metallization technologies
2003 · E. Kobori, N. Izumi, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 8
High density embedded DRAM technology with 0.38 μm pitch in DRAM and 0.42 μm pitch in LOGIC by W/PolySi gate and Cu dual damascene metallization
2002 · N. Takenaka, M. Segawa, et al. · Symposium on VLSI Technology · 6
SiO2/Si Interfaces Studied by STM and HRTEM (II)
1990 · Masaaki Niwa, Minoru Onoda, et al. · Japanese Journal of Applied Physics · 5
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Highly manufacturable ELK integration technology with metal hard mask process for high performance 32nm-node interconnect and beyond
2010 · S. Matsumoto, T. Harada, et al. · IEEE International Interconnect Technology Conference (IITC) · 3
Thermal stability of NiSi controlled by post silicidation metal doping method
2006 · K. Nagahiro, K. Tsutsui, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 3
Technology challenges for advanced Cu CMP using a new slurry free process
2003 · M. Matsumoto, K. Suzuki, et al. · IEEE International Interconnect Technology Conference (IITC) · 3
Irregular Increase in Sheet Resistance of Ni Silicides at Temperature Range of Transition from NiSi to NiSi2
2006 · K. Tsutsui, Ruifei Xiang, et al. · International Workshop on Junction Technology · 2
Tunneling injection damage in Si-SiO2 structures and its correlation with oxidation conditions
1988 · Y. Yasuda, S. Zaima, et al. · Applied Surface Science · 1
Irregular increase in sheet resistance of Ni silicides at transition temperature range from NISI to NISI2 depending on annealing time
2006 · Ruifei Xiang, Koji Nagahiro, et al. · Tokyo Tech Research Repository (Tokyo Institute of Technology)
Irregular Increase inSheet Resistance ofNiSilicides atTemperature Rangeof Transition fromNiSitoNiSi2
2006 · Ruifei Xiang, Koji Nagahiro, et al.
SiO_2/Si Interfaces Studied by STM and HRTEM(II) : Etching and Deposition Technology
1991 · M. Niwa, Minoru Onoda, et al. · JJAP series
Works count: 15
Citation count: 74
H-index: 5
I10-index: 3
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