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R.W. Bower

Observed names: Bower, Robert William, R W Bower, R. Bower, R. W. Bower, R.W Bower, R.W. BOWER, Robert Bower, Robert W. Bower, Robert W. Bower Robert W. Bower
Observed institutions: California Institute of Technology, HRL Laboratories (United States), University of California System, TRW (United States), Hughes Aircraft (United States), University of California, Davis
OpenAlex ID: A5111699047
Growth Kinetics Observed in the Formation of Metal Silicides on Silicon
1972 · R. W. Bower, J. W. Mayer · Applied Physics Letters · 177
Characteristics of aluminum-titanium electrical contacts on silicon
1973 · Robert W. Bower · Applied Physics Letters · 125
Formation kinetics and structure of Pd2Si films on Si
1973 · R.W. Bower, D. Sigurd, et al. · Solid-State Electronics · 115
Low temperature Si3N4 direct bonding
1993 · Robert W. Bower, Mohd S. Ismail, et al. · Applied Physics Letters · 81
Characterization of polycrystalline layers by channelling measurements
1973 · D. Sigurd, R.W. Bower, et al. · Thin Solid Films · 65
MOS field effect transistors formed by gate masked ion implantation
1968 · R.W. Bower, H.G. Dill, et al. · IEEE Transactions on Electron Devices · 56
Zn and Te Implantations into GaAs
1967 · J. W. Mayer, O. J. Marsh, et al. · Journal of Applied Physics · 38
The design and fabrication of a magnetically actuated micromachined flow valve
1990 · R.L. Smith, R.W. Bower, et al. · Sensors and Actuators A Physical · 34
The influence of boron ion implantation on hydrogen blister formation in n-type silicon
1999 · T. Höchbauer, K. C. Walter, et al. · Journal of Applied Physics · 31
Insulated gate field effect transistors fabricated using the gate as source-drain mask
1966 · R.W. Bower, R.G. Dill · Technical digest - International Electron Devices Meeting/Technical digest · 28
Aligned wafer bonding: A key to three dimensional microstructures
1991 · R. W. Bower, M. S. Ismail, et al. · Journal of Electronic Materials · 27
DEEP (1–10 μ) PENETRATION OF ION-IMPLANTED DONORS IN SILICON
1966 · R. W. Bower, R. Baron, et al. · Applied Physics Letters · 23
Beyond “Smart-Cut®” Recent Advances in Layer Transfer for Material Integration
1998 · Q-Y. Tong, R.W. Bower · MRS Bulletin · 18
Depth profiling of hydrogen in crystalline silicon using elastic recoil detection analysis
2001 · R.D. Verda, C.J. Maggiore, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 17
Overlapping-gate buried-channel charge-coupled devices
1973 · A.M. Mohsen, R. Bower, et al. · Electronics Letters · 17
Low Temperature Direct Silicon Wafer Bonding Using Argon Activation
1997 · Robert W. Bower Robert W. Bower, Frank Y.-J. Chin Frank Y.-J. Chin · Japanese Journal of Applied Physics · 15
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Low temperature direct bonding of non-hydrophilicsurfaces
1994 · V.H.C. Watt, R.W. Bower · Electronics Letters · 15
Platinum silicide fusion bonding
1991 · M.S. Ismail, R.W. Bower · Electronics Letters · 15
A 64-kbit block addressed charge-coupled memory
1976 · A.M. Mohsen, R.W. Bower, et al. · IEEE Journal of Solid-State Circuits · 14
Electron beam and ion beam fabricated microwave switch
1970 · E.D. Wolf, L.O. Bauer, et al. · IEEE Transactions on Electron Devices · 14
Geometric considerations relevant to hydrogen depth profiling by reflection elastic recoil detection analysis
2001 · R.D Verda, J.R Tesmer, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 13
Silicon-on-lnsulator Technology
1998 · Jean-Pierre Colinge, Robert W. Bower · MRS Bulletin · 13
A high density overlapping gate charge coupled device array
1973 · R.W. Bower, T.A. Zimmerman, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13
Low Temperature Copper to Copper Direct Bonding
1998 · Yang Albert Li, Robert W. Bower, et al. · Japanese Journal of Applied Physics · 12
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Fractal transitions in diffusion-limited cluster formation
1991 · R. W. Bower, S. D. Collins · Physical Review A · 11
Works count: 71
Citation count: 1,116
H-index: 15
I10-index: 27
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