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N. Biswas
Observed names:
Nafiz B. Biswas,
Nivedita Biswas
Institution:
University of Warwick
Observed institutions:
Texas Tech University,
North Carolina State University,
University of Warwick,
Kyma Technologies (United States),
University of Missouri
ORCID:
0009-0009-4592-4497
Observed ORCID:
0009-0009-4592-4497
OpenAlex ID:
A5111830231
HfO 2 gate dielectric with 0.5 nm equivalent oxide thickness
2002
·
H. Harris
, K. Choi
, et al.
·
Applied Physics Letters
·
84
Permittivity enhancement of aluminum oxide thin films with the addition of silver nanoparticles
2006
·
R. Ravindran
, K. Gangopadhyay
, et al.
·
Applied Physics Letters
·
54
Work function tuning of nickel silicide by co-sputtering nickel and silicon
2005
·
Nivedita Biswas
, Jason Gurganus
, et al.
·
Applied Physics Letters
·
37
Plasma enhanced metalorganic chemical vapor deposition of amorphous aluminum nitride
2001
·
H. Harris
, N. Biswas
, et al.
·
Journal of Applied Physics
·
35
PDF
Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric
2008
·
Rahul Suri
, Bongmook Lee
, et al.
·
Applied Physics Letters
·
28
Investigation on hexamethyldisilazane vapor treatment of plasma-damaged nanoporous organosilicate films
2005
·
T. Rajagopalan
, B. Lahlouh
, et al.
·
Applied Surface Science
·
28
Supercritical carbon dioxide extraction of porogens for the preparation of ultralow-dielectric-constant films
2003
·
T. Rajagopalan
, B. Lahlouh
, et al.
·
Applied Physics Letters
·
27
Electrical properties of fluorinated amorphous carbon films
2001
·
N. Biswas
, H. R. Harris
, et al.
·
Journal of Applied Physics
·
25
PDF
Supercritical CO2extraction of porogen phase: An alternative route to nanoporous dielectrics
2004
·
J.A. Lubguban
, S. Gangopadhyay
, et al.
·
Journal of materials research/Pratt's guide to venture capital sources
·
17
Electrical and Physical Analysis of MoTa Alloy for Gate Electrode Applications
2006
·
Bei Chen
, Nivedita Biswas
, et al.
·
Journal of The Electrochemical Society
·
15
PDF
Electric field and temperature-induced removal of moisture in nanoporous organosilicate films
2004
·
N. Biswas
, J. A. Lubguban
, et al.
·
Applied Physics Letters
·
13
Evaluation of fermi level pinning in low, midgap and high workfunction metal cate electrodes on ALD and MOCVD HfO/sub 2/ under high temperature exposure
2005
·
R. Jha
, JaeHoon Lee
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
12
Hexamethyldisilazane vapor treatment of plasma damaged nanoporous methylsilsesquioxane films: Structural and electrical characteristics
2007
·
T. Rajagopalan
, B. Lahlouh
, et al.
·
Thin Solid Films
·
10
Influence of oxygen diffusion through capping layers of low work function metal gate electrodes
2006
·
Bei Chen
, R. Jha
, et al.
·
IEEE Electron Device Letters
·
10
Electrical properties of amorphous silicon carbide films
2002
·
N. Biswas
, X. Wang
, et al.
·
Applied Physics Letters
·
10
Characteristics of Ni/Gd FUSI for NMOS Gate Electrode Applications
2007
·
Bongmook Lee
, Nivedita Biswas
, et al.
·
IEEE Electron Device Letters
·
8
Evaluation of nickel and molybdenum silicides for dual gate complementary metal-oxide semiconductor application
2005
·
Nivedita Biswas
, Jason Gurganus
, et al.
·
Applied Physics Letters
·
8
Enhanced Dielectric Constant of HfO2 and Al2O3 Thin-Films with Silver Nanoparticles
2006
·
Ramasamy Ravindran
, Maslina Othman
, et al.
·
ECS Transactions
·
6
Post treatments of plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon carbide for low dielectric constant films
2006
·
B. Lahlouh
, T. Rajagopalan
, et al.
·
Thin Solid Films
·
5
Atomic Layer Deposition of Hafnium Dioxide on TiN and Self-Assembled Monolayer Molecular Film
2009
·
Zhong Chen
, Smita Sarkar
, et al.
·
Journal of The Electrochemical Society
·
3
PDF
Work function extraction of metal gates with alternate channel materials
2012
·
Mary Coan
, Derek Johnson
, et al.
·
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
·
2
Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates
2011
·
J. H. Leach
, N. Biswas
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
2
Creating Nanoporosity by Selective Extraction of Porogens Using Supercritical Carbon Dioxide/Cosolvent Processes
2003
·
B. Lahlouh
, T. Rajagopalan
, et al.
·
MRS Proceedings
·
2
Ni/sub x/Ta/sub 1-x/Si and Ni/sub x/Pt/sub 1-x/Si ternary alloys for work function tuning on SiO/sub 2/, HfSiO/sub x/ and HfO/sub 2/ dielectrics
2005
·
N. Biswas
, S. Novak
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
1
Electrical properties of fluorinated amorphous carbon (a-C:F(x)) and aluminum nitride (AlN) films
2001
·
Nivedita Biswas
·
1
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Works count:
42
Citation count:
443
H-index:
12
I10-index:
15
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