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Ch. Dubois

Silicon nitride and oxynitride deposition by RT-LPCVD
1997 · B. Semmache, M. Lemiti, et al. · Thin Solid Films · 25
Diffusion of low-dose implanted aluminum in silicon in inert and dry O2 ambient
2000 · Ch. Ortiz, D. Mathiot, et al. · Journal of Applied Physics · 14
Boron gettering on cavities induced by helium implantation in Si
2001 · F. Roqueta, D. Alquier, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 13
Diffusion of phosphorus implanted in germanium
2008 · Th. Canneaux, D. Mathiot, et al. · Materials Science and Engineering B · 12
Thermal redistribution of Al implanted in Si: evidences for interactions with extended defects
1999 · Ch. Ortiz, J.J. Grob, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 9
Growth and physical properties of in situ phosphorus-doped RTLPCVD polycrystalline silicon thin films
1998 · S Kallel, B Semmache, et al. · Materials Science in Semiconductor Processing · 4
Thermal Evolution of Deuterium in 4H-Sic
2002 · R. Delamare, E. Ntsoenzok, et al. · MRS Proceedings · 1
Trapping of aluminium by dislocation loops in Si
2001 · Ch Ortiz, D Mathiot, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1
Direct LPE Growth of Textured Silicon Thin Layers on C-SI Etched-Grid Fixed on Ceramic Substrate
2020 · A. Fave, B. Semmache, et al. · Routledge eBooks
Thermal evolution of deuterium in 4H-SiC
2002 · Delamare, Romain, Ntsoenzok, E., et al. · HAL
Dopant - Extended Defects Interactions: The Case of Aluminum
2000 · Ch. Ortiz, D. Mathiot, et al. · MRS Proceedings
Works count: 11
Citation count: 79
H-index: 5
I10-index: 4
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