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R. Bez

Observed names: Bez, R Bez, R. BEZ
OpenAlex ID: A5111947979
Introduction to flash memory
2003 · R. Bez, E. Camerlenghi, et al. · Proceedings of the IEEE · 870
Flash memory cells-an overview
1997 · P. Pavan, R. Bez, et al. · Proceedings of the IEEE · 739
Electronic Switching in Phase-Change Memories
2004 · A. Pirovano, A.L. Lacaita, et al. · IEEE Transactions on Electron Devices · 635
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
2004 · A. Pirovano, A.L. Lacaita, et al. · IEEE Transactions on Electron Devices · 385
Reliability Study of Phase-Change Nonvolatile Memories
2004 · A. Pirovano, A. Redaelli, et al. · IEEE Transactions on Device and Materials Reliability · 277
Scaling analysis of phase-change memory technology
2004 · A. Pirovano, A.L. Lacaita, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 268
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
2004 · F. Pellizzer, A. Pirovano, et al. · Symposium on VLSI Technology · 199
Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials
2004 · A. Redaelli, A. Pirovano, et al. · IEEE Electron Device Letters · 140
A 90nm Phase Change Memory Technology for Stand-Alone Non-Volatile Memory Applications
2006 · F. Pellizzer, A. Benvenuti, et al. · Symposium on VLSI Technology · 127
Analysis of Phase Distribution in Phase-Change Nonvolatile Memories
2004 · D. Ielmini, A.L. Lacaita, et al. · IEEE Electron Device Letters · 126
Amorphization dynamics of Ge2Sb2Te5 films upon nano- and femtosecond laser pulse irradiation
2008 · J. Siegel, W. Gawelda, et al. · Journal of Applied Physics · 109
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An 8Mb demonstrator for high-density 1.8V Phase-Change Memories
2004 · F. Bedeschi, C. Resta, et al. · Symposium on VLSI Circuits · 96
A physically-based model of the effective mobility in heavily-doped n-MOSFETs
1998 · S. Villa, A.L. Lacaita, et al. · IEEE Transactions on Electron Devices · 91
Failure mechanisms of flash cell in program/erase cycling
2002 · P. Cappelletti, R. Bez, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 81
How far will silicon nanocrystals push the scaling limits of NVMs technologies?
2004 · B. De Salvo, C. Gerardi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 80
Crystallization and phase separation in Ge2+xSb2Te5 thin films
2003 · S. Privitera, E. Rimini, et al. · Journal of Applied Physics · 75
Reliability characterization of Phase Change Memory
2009 · B. Gleixner, F. Pellizzer, et al. · Non-Volatile Memory Technology Symposium · 72
Data Retention Characterization of Phase-Change Memory Arrays
2007 · B. Gleixner, A. Pirovano, et al. · IEEE International Reliability Physics Symposium proceedings · 71
Ion-irradiation-induced selective bond rearrangements in amorphous GeTe thin films
2009 · R. De Bastiani, E. Carria, et al. · Physical Review B · 53
4-Mb MOSFET-selected /spl mu/trench phase-change memory experimental chip
2005 · F. Bedeschi, R. Bez, et al. · IEEE Journal of Solid-State Circuits · 51
Experimental transient analysis of the tunnel current in EEPROM cells
1990 · R. Bez, D. Cantarelli, et al. · IEEE Transactions on Electron Devices · 48
Current status of chalcogenide phase change memory
2005 · G. Atwood, R. Bez · Conference digest · 46
40-mm/sup 2/ 3-V-only 50-MHz 64-Mb 2-b/cell CHE NOR flash memory
2000 · G. Campardo, R. Micheloni, et al. · IEEE Journal of Solid-State Circuits · 41
Impact of crystallization statistics on data retention for phase change memories
2006 · A. Redaelli, D. Ielmini, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 39
Cast: An electrical stress test to monitor single bit failures in flash-EEPROM structures
1997 · P. Cappelletti, R. Bez, et al. · Microelectronics Reliability · 38
Works count: 93
Citation count: 5,562
H-index: 30
I10-index: 58
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