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N. Kasai

Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCs
2009 · Noboru Sakimura, Tadahiko Sugibayashi, et al. · IEEE Journal of Solid-State Circuits · 175
Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire
2011 · S. Fukami, T. Suzuki, et al. · Applied Physics Letters · 156
Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire
2011 · T. Suzuki, S. Fukami, et al. · Applied Physics Letters · 155
10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications
2014 · Noboru Sakimura, Yukihide Tsuji, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 109
Magnetic tunnel junction for nonvolatile CMOS logic
2010 · Hideo Ohno, Tetsuo Endoh, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 86
A 30-ns 64-Mb DRAM with built-in self-test and self-repair function
1992 · A. Tanabe, T. Takeshima, et al. · IEEE Journal of Solid-State Circuits · 81
Recent Progress of Perpendicular Anisotropy Magnetic Tunnel Junctions for Nonvolatile Vlsi
2012 · SHOJI IKEDA, HIDEO SATO, et al. · SPIN · 75
Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm
2013 · H. Sato, T. Yamamoto, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 65
Hot-electron immunity of SiO/sub 2/ dielectrics with fluorine incorporation
1989 · P.J. Wright, N. Kasai, et al. · IEEE Electron Device Letters · 61
Nonvolatile Magnetic Flip-Flop for standby-power-free SoCs
2008 · Noboru Sakimura, Tadahiko Sugibayashi, et al. · Custom Integrated Circuits Conference · 58
A Preparation of Perpendicular Magnetic Recording Media by an Electroless Plating Method
1983 · Tetsuya Osaka, Naoki Kasai, et al. · Journal of The Electrochemical Society · 58
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Selective silicon epitaxial growth for device-isolation technology
1986 · Akihiko Ishitani, Hiroshi Kitajima, et al. · Microelectronic Engineering · 54
20-nm magnetic domain wall motion memory with ultralow-power operation
2013 · S. Fukami, M. Yamanouchi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 52
An effective channel length determination method for LDD MOSFETs
1996 · K. Takeuchi, N. Kasai, et al. · IEEE Transactions on Electron Devices · 46
A capacitor-over-bit-line (COB) cell with a hemispherical-grain storage node for 64 Mb DRAMs
2002 · M. Sakao, N. Kasai, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 42
A 30-ns 256-Mb DRAM with a multidivided array structure
1993 · T. Sugibayashi, T. Takeshima, et al. · IEEE Journal of Solid-State Circuits · 40
Nonvolatile Crossbar Switch Using $\hbox{TiO}_{x}/ \hbox{TaSiO}_{y}$ Solid Electrolyte
2010 · Munehiro Tada, Toshitsugu Sakamoto, et al. · IEEE Transactions on Electron Devices · 38
A 90nm 12ns 32Mb 2T1MTJ MRAM
2009 · R. Nebashi, N. Sakimura, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 36
Evaluation of Transistor Property Variations Within Chips on 300-mm Wafers Using a New MOSFET Array Test Structure
2004 · N. Izumi, H. Ozaki, et al. · IEEE Transactions on Semiconductor Manufacturing · 36
Facet Formation in Selective Silicon Epitaxial Growth
1985 · Akihiko Ishitani, Hiroshi Kitajima, et al. · Japanese Journal of Applied Physics · 33
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A Study on Electroless Plating of Cobalt Alloy Films for Perpendicular Recording
1983 · Tetsuya Osaka, Naoki Kasai, et al. · Journal of The Electrochemical Society · 33
A content addressable memory using magnetic domain wall motion cells
2011 · Ryusuke Nebashi, Noboru Sakimura, et al. · Symposium on VLSI Circuits · 31
Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions
2012 · Keizo Kinoshita, Tadashi Yamamoto, et al. · Japanese Journal of Applied Physics · 30
High-speed and reliable domain wall motion device: Material design for embedded memory and logic application
2012 · S. Fukami, M. Yamanouchi, et al. · Symposium on VLSI Technology · 30
Improvement of Thermal Stability of Magnetoresistive Random Access Memory Device with SiN Protective Film Deposited by High-Density Plasma Chemical Vapor Deposition
2008 · Katsumi Suemitsu, Yuichi Kawano, et al. · Japanese Journal of Applied Physics · 28
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Works count: 117
Citation count: 2,172
H-index: 27
I10-index: 49
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