Work

A capacitor-over-bit-line (COB) cell with a hemispherical-grain storage node for 64 Mb DRAMs

Year: 2002

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1990.237114

Authors: M. Sakao, N. Kasai, T. Ishijima, E. Ikawa, H. Watanabe, K. Terada, T. Kikkawa

Institution: NEC (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W2536073752

FWCI: 2.628

Cites: 1

Cited by: 42

Related to: 10