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K.N. Kim

Observed name: Kyungjeon Kim
OpenAlex ID: A5113697522
Ongoing Evolution of DRAM Scaling via Third Dimension -Vertically Stacked DRAM -
2023 · J.W. Han, S.H. Park, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 96
Characteristics of TiN barrier layer against Cu diffusion
1999 · M.Y. Kwak, D.H. Shin, et al. · Thin Solid Films · 93
Highly Manufacturable 1Gb SDRAM
1997 · K.N. Kim, J.Y. Lee, et al. · Symposium on VLSI Technology · 23
Novel body tied FinFET cell array transistor DRAM with negative word line operation for sub 60nm technology and beyond
2004 · C.H. Lee, J.M. Yoon, et al. · Symposium on VLSI Technology · 22
A process technology for 1 giga-bit DRAM
2002 · K.P. Lee, Y.S. Park, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
A 0.13 μm DRAM technology for giga bit density stand-alone and embedded DRAMs
2002 · K.N. Kim, T.Y. Chung, et al. · Symposium on VLSI Technology · 10
Highly manufacturable 100 nm 6T low power SRAM with single poly-Si gate technology
2004 · K. Koh, B.J. Hwang, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 9
Simultaneously formed storage node contact and metal contact cell (SSMC) for 1 Gb DRAM and beyond
2002 · J.Y. Lee, K.N. Kim, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6
A Real-time Media Framework for Asymmetric MPSoC
2006 · Junggyu Park, Hyojung Song, et al. · IEEE International Symposium on Real-Time Distributed Computing (ISORC) · 4
A 0.15 μm DRAM technology node for 4 Gb DRAM
2002 · K.N. Kim, H.S. Jeong, et al. · Symposium on VLSI Technology · 4
Highly manufacturable and high performance SDR/DDR 4 Gb DRAM
2002 · K.N. Kim, H.S. Jeong, et al. · Symposium on VLSI Technology · 4
A DRAM technology using MIM BST capacitor for 0.15 /spl mu/m DRAM generation and beyond
1999 · K.N. Kim, D.H. Kwak, et al. · Symposium on VLSI Technology · 3
Isolation merged bit line cell (IMBC) for 1 Gb DRAM and beyond
2002 · J.K. Park, J.Y. Lee, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 1
Works count: 13
Citation count: 291
H-index: 7
I10-index: 6
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