A DRAM technology using MIM BST capacitor for 0.15 /spl mu/m DRAM generation and beyond
Year: 1999
Type: conference-paper
Source: Symposium on VLSI Technology
Authors: K.N. Kim, D.H. Kwak, Y.S. Hwang, G.T. Jeong, T.Y. Chung, B.J. Park, Y.S. Chun, J.H. Oh, C.Y. Yoo, B.S. Joo
Institutions: Samsung (South Korea), Samsung Electronics (South Korea)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2136574584