Work

Degradation of Charge Collection Efficiency Obtained for 6H-SiC n+p Diodes Irradiated with Gold Ions

Year: 2007

Type: article

Abstract: The charge generated in 6H-SiC n+p diodes by gold (Au) ion irradiation at an energy of 12 MeV was evaluated using the Transient Ion Beam Induced Current (TIBIC). The signal peak of the transient current increases, and the fall-time decreases with increasing applied reverse bias. The value of collected charge experimentally obtained is smaller than the ideal value. The Charge Collection Efficiency (CCE) of 6H-SiC n+p diodes irradiated with Au ions is approximately 50 % in spite that the CCE of 100 % is obtained in the case of oxygen (O) ion irradiation.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.556-557.913

Authors: Takeshi Ohshima, Takahiro Satoh, Masakazu Oikawa, Shinobu Onoda, Shigeomi Hishiki, Toshio Hirao, Toshio Kamiya, T. Yokoyama, A. Sakamoto, R. Tanaka, I. Nakano, Günter Wagner, Hisayoshi Itoh

Institutions: National Institutes for Quantum Science and Technology, Japan Atomic Energy Agency, Okayama University, Leibniz Institute for Crystal Growth

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W1978715485

FWCI: 0.595

Cites: 12

Cited by: 5

Related to: 10