Work

A 0.5V 4Mb logic-process compatible embedded resistive RAM (ReRAM) in 65nm CMOS using low-voltage current-mode sensing scheme with 45ns random read time

Year: 2012

Type: conference-paper

Source: Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference

DOI: 10.1109/isscc.2012.6177079

Authors: Meng-Fan Chang, Che-Wei Wu, Chia-Cheng Kuo, Shin-Jang Shen, Ku-Feng Lin, Shu-Meng Yang, Ya-Chin King, Chorng-Jung Lin, Yu-Der Chih

Institutions: National Tsing Hua University, Taiwan Semiconductor Manufacturing Company (Taiwan)

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1997388392

FWCI: 10.81

Cites: 6

Cited by: 85

Related to: 10