Atmospheric In situ Arsenic-Doped SiGe Selective Epitaxial Growth for Raised-Extension N-type Metal–Oxide–Semiconductor Field-Effect Transistor
Year: 2007
Type: article
Abstract: We have investigated the AsH 3 and GeH 4 flow rate dependences of As concentration and growth rate for atmospheric in situ As-doped SiGe selective epitaxial growth. A high As concentration of 3.2 × 10 19 atoms/cm 3 and a high growth rate of 13 nm/min were achieved for Si 0.79 Ge 0.21 selective epitaxial growth. The good selectivity was confirmed, and the epitaxial film showed high crystalline quality, a smooth surface and an abrupt change in the dopant profile at the interface. These results were interpreted in terms of the suppression of As surface segregation and the enhancement of As diffusion due to Ge incorporation in Si growth.
DOI: 10.1143/jjap.46.1916
Authors: Tetsuya Ikuta, Yuki Miyanami, Shigeru Fujita, Hayato Iwamoto, Shingo Kadomura, Takayoshi Shimura, Heiji Watanabe, Kiyoshi Yasutake
Institutions: Sony (Japan), The University of Osaka
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2000579924