Work

Use of scanning tunneling microscopy and transmission electron microscopy to quantify and characterize CoSi2 roughness

Year: 1992

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.585863

Authors: R. C. Chapman, P. Smith, R. P. Adu, G. E. McGuire, C. Canovai, C. Osburn

Institution: North Carolina State University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2010708652

FWCI: 2.51

Cites:

Cited by: 13

Related to: 10