Work

Elimination of End‐of‐Range Shallow Junction Implantation Damage during CMOS Titanium Silicidation

Year: 1989

Type: article

Source: Journal of The Electrochemical Society

DOI: 10.1149/1.2096656

Authors: D. ‐S. Wen, P. Smith, C. M. Osburn, G. A. Rozgonyi

Institutions: North Carolina State University, MCNC Research and Development Institute

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2053790467

FWCI: 3.976

Cites:

Cited by: 37

Related to: 10