Work

In situ post etching treatment as a solution to improve defect density for porous low-k integration using metallic hard masks

Year: 2009

Type: conference-paper

Source: IEEE International Interconnect Technology Conference (IITC)

DOI: 10.1109/iitc.2009.5090398

Authors: N. Posseme, R. Bouyssou, T. Chevolleau, T. David, V. Arnal, S. Chhun, C. Monget, E. Richard, D. Galpin, J. Guillan, L. Arnaud, D. Roy, M. Guillermet, J. Ramard, O. Joubert, C. Verove

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, Centre National de la Recherche Scientifique, STMicroelectronics (France)

Language: English

Topic: Copper Interconnects and Reliability

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2126205997

FWCI: 1.297

Cites: 1

Cited by: 4

Related to: 10