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Eiichiro Sakuma

Observed names: E Sakuma, E. Sakuma, E.Sakuma
OpenAlex ID: A5007938656
Temperature dependence of electrical properties of n- and p-type 3C-SiC
1987 · M. Yamanaka, H. Daimon, et al. · Journal of Applied Physics · 144
Electron spin resonance in electron-irradiated 3C-SiC
1989 · Hisayoshi Itoh, Naohiro Hayakawa, et al. · Journal of Applied Physics · 126
High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition
1984 · K. Sasaki, E. Sakuma, et al. · Applied Physics Letters · 126
Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes
1987 · H. Okumura, E. Sakuma, et al. · Journal of Applied Physics · 118
Schottky barrier diodes on 3C-SiC
1985 · S. Yoshida, K. Sasaki, et al. · Applied Physics Letters · 110
Elemental composition of β-Sic(001) surface phases studied by medium energy ion scattering
1990 · S. Hara, W.F.J. Slijkerman, et al. · Surface Science · 105
Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si
1987 · H. Mukaida, H. Okumura, et al. · Journal of Applied Physics · 81
Experimental 3C-SiC MOSFET
1986 · Y. Kondo, T. Takahashi, et al. · IEEE Electron Device Letters · 75
Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition
1988 · Mikiya Shinohara, Mitsugu Yamanaka, et al. · Japanese Journal of Applied Physics · 58
Schottky-barrier field-effect transistors of 3C-SiC
1986 · S. Yoshida, H. Daimon, et al. · Journal of Applied Physics · 43
Self-limiting growth on the β-SiC(001) surface
1992 · Shiro Hara, Y. Aoyagi, et al. · Surface Science · 38
Microscopic mechanisms of accurate layer-by-layer growth of β-SiC
1993 · Shiro Hara, T. Meguro, et al. · Thin Solid Films · 33
Epitaxial growth of GaAs and GaN by gas source molecular beam epitaxy using organic group V compounds
1992 · H. Okumura, S. Yoshida, et al. · Journal of Crystal Growth · 32
Operation of Schottky-barrier field-effect transistors of 3C-SiC up to 400 °C
1987 · H. Daimon, M. Yamanaka, et al. · Applied Physics Letters · 30
High-Temperature Operation of Silicon Carbide MOSFET
1987 · Yasushi Kondo, Tetsuo Takahashi, et al. · Japanese Journal of Applied Physics · 30
Epitaxial growth of 3C-SiC on Si by low-pressure chemical vapor deposition
1986 · Y. Fujiwara, E. Sakuma, et al. · Applied Physics Letters · 30
Hetero-epitaxial growth of cubic GaN on GaAs by gas-source molecular beam epitaxy
1992 · S. Yoshida, H. Okumura, et al. · Surface Science · 29
The preparation of single crystals of refractory carbides and nitrides
1981 · Y. Kumashiro, E. Sakuma, et al. · Journal of Crystal Growth · 27
The Vickers micro-hardness of non-stoichiometric niobium carbide and vanadium carbide single crystals up to 1500� C
1980 · Y. Kumashiro, E. Sakuma · Journal of Materials Science · 26
Temperature Dependence of Electrical Properties of Nitrogen-Doped 3C-SiC
1987 · Mitsugu Yamanaka, Hiroshi Daimon, et al. · Japanese Journal of Applied Physics · 25
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Heteroepitaxial growth of SiC polytypes
1987 · S. Yoshida, E. Sakuma, et al. · Journal of Applied Physics · 22
Annealing Effects on Al and AN-Si Contacts with 3C–SiC
1986 · Hiroshi Daimon, Mitsugu Yamanaka, et al. · Japanese Journal of Applied Physics · 22
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The preparation and characteristics of ZrC and TaC single crystals using an r.f. floating-zone process
1981 · Y. Kumashiro, Y. Nagai, et al. · Journal of Materials Science · 22
The preparation of NbN and nbc single crystals by an r.f. floating zone process
1980 · Y Kumashiro, E Sakuma, et al. · Journal of the Less Common Metals · 20
Solid State Reaction of Mo on Cubic and Hexagonal SiC
1990 · Shiro Hara, Kiyohisa Suzuki, et al. · Japanese Journal of Applied Physics · 19
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Works count: 53
Citation count: 1,520
H-index: 22
I10-index: 30
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