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Naomu Kitano

Excellent electrical properties of TiO2∕HfSiO∕SiO2 layered higher-k gate dielectrics with sub-1nm equivalent oxide thickness
2008 · Hiroaki Arimura, Naomu Kitano, et al. · Applied Physics Letters · 17
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Charge trapping properties in TiO2∕HfSiO∕SiO2 gate stacks probed by scanning capacitance microscopy
2008 · Y. Naitou, H. Arimura, et al. · Applied Physics Letters · 16
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Impact of Physical Vapor Deposition-Based In situ Fabrication Method on Metal/High-k Gate Stacks
2007 · Heiji Watanabe, Shinya Horie, et al. · Japanese Journal of Applied Physics · 14
Fabrication of advanced La-incorporated Hf-silicate gate dielectrics using physical-vapor-deposition-based in situ method and its effective work function modulation of metal/high-k stacks
2010 · Hiroaki Arimura, Yudai Oku, et al. · Journal of Applied Physics · 12
Impact of Thermally Induced Structural Changes on the Electrical Properties of TiN/HfLaSiO Gate Stacks
2011 · Takashi Yamamoto, Shingo Ogawa, et al. · Japanese Journal of Applied Physics · 8
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Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
2007 · Naomu Kitano, Shinya Horie, et al. · Japanese Journal of Applied Physics · 4
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Detrimental Hf penetration into TiN gate electrode and subsequent degradation in dielectric properties of HfSiO high-k film
2011 · Hiroaki Arimura, Yuki Odake, et al. · Applied Physics Letters · 3
La Induced Passivation of High-k Bulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2 Stacks
2011 · Masayuki Saeki, Hiroaki Arimura, et al. · Japanese Journal of Applied Physics · 3
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Electronic Structure Characterization of La Incorporated Hf-Based High-k Gate Dielectrics by NEXAFS
2011 · Takashi Yamamoto, Singo Ogawa, et al. · Journal of Nanoscience and Nanotechnology · 3
Oxygen-induced high-k degradation in TiN/HfSiO gate stacks
2012 · Takuji Hosoi, Yuki Odake, et al. · IEEE Silicon Nanoelectronics Workshop · 2
Dielectric and Interface Properties of TiO2/HfSiO/SiO2 Layered Structures Fabricated by in situ PVD Method
2008 · Hiroaki Arimura, Yuichi Naitou, et al. · ECS Transactions · 2
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High Performance Gate-First pMISFET with TiN/HfSiON Gate Stacks Fabricated with PVD-Based In-Situ Method
2007 · Takaaki Kawahara, Yukio Nishida, et al. · ECS Transactions · 2
Comprehensive study and control of oxygen vacancy induced effective work function modulation in gate-first high-k/metal inserted poly-Si stacks
2010 · T. Hosoi, M. Saeki, et al. · Symposium on VLSI Technology · 1
Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method
2008 · Hiroaki Arimura, Shinya Horie, et al. · Applied Surface Science · 1
Secondary Electron Emission from Copper Surface.
1998 · Naomu KITANO, Namio MATUDA, et al. · Shinku · 1
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Oxygen-induced high-k dielectric degradation in TiN/Hf-based high-k gate stacks
2012 · Takuji Hosoi, Yuki Odake, et al. · IEICE Technical Report; IEICE Tech. Rep.
Effective work function control of metal inserted poly-Si electrodes on HfSiO dielectrics by in-situ oxygen treatment of metal surface
2012 · Naomu Kitano, Keisuke Chikaraishi, et al. · Current Applied Physics
Impact of Si Diffusion Barrier Layer Formed on TiN Surface by In Situ Oxygen Treatment Process for Advanced Gate-First Metal/High-k Stacks
2012 · Naomu Kitano, Keisuke Chikaraishi, et al. · ECS Transactions
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Impact of Si Diffusion Barrier Layer Formed on TiN Surface by In Situ Oxygen Treatment Process for Advanced Gate-First Metal/High-k Stacks
2012 · Naomu Kitano, Keisuke Chikaraishi, et al. · ECS Meeting Abstracts
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La Induced Passivation of High-kBulk and Interface Defects in Polycrystalline Silicon/TiN/HfLaSiO/SiO2Stacks
2011 · Masayuki Saeki, Hiroaki Arimura, et al. · Japanese Journal of Applied Physics
Hf and La upward diffusion into TiN electrode in TiN/HfLaSiO/SiO2 gate stacks induced by high-temperature annealing and its suppression with MIPS structure
2011 · Yuki Odake, Hiroaki Arimura, et al. · IEICE Technical Report; IEICE Tech. Rep.
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
2010 · Takuji Hosoi, Masayuki Saeki, et al. · IEICE Technical Report; IEICE Tech. Rep.
Fabrication of Advanced TiO_2/HfSiO/SiO_2 Layered Higher-k Dielectrics by Atomically Controlled In-situ PVD-Based Method
2008 · Heiji Watanabe, Hiroaki Arimura, et al.
Dielectric and Interface Properties of TiO2/HfSiO/SiO2 Layered Structures Fabricated by in situ PVD Method
2008 · Hiroaki Arimura, Yuichi Naitou, et al. · ECS Meeting Abstracts
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High Performance Gate-First pMISFET with TiN/HfSiON Gate Stacks Fabricated with PVD-Based In-Situ Method
2007 · Takaaki Kawahara, Yukio Nishida, et al. · ECS Meeting Abstracts
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Works count: 28
Citation count: 89
H-index: 5
I10-index: 4
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