Author

Andrey O. Konstantinov

Observed names: A O Konstantinov, A. Konstantinov, A. O. Konstantinov, A.O. Konstantinov, Andrei Konstantinov, Andrei O Konstantinov, Andrei O. Konstantinov, Andreij Konstantinov

Observed institutions: ON Semiconductor (United States), Linköping University, Russian Academy of Sciences, University of Colorado Boulder, ABB (Sweden), Technical University of Munich, Fairchild Semiconductor (United States), KTH Royal Institute of Technology, Ioffe Institute

ORCID: 0000-0001-9502-9495

Observed ORCID: 0000-0001-9502-9495

OpenAlex ID: A5009363380

Ionization rates and critical fields in 4H silicon carbide

1997 · A. O. Konstantinov, Q. Wahab, et al. · Applied Physics Letters · 412

Photoluminescence studies of porous silicon carbide

1995 · A. O. Konstantinov, A. Henry, et al. · Applied Physics Letters · 144

Electron effective masses in 4H SiC

1995 · N. T. Son, W. M. Chen, et al. · Applied Physics Letters · 133

In situ substrate preparation for high-quality SiC chemical vapour deposition

1997 · C. Hallin, F. Owman, et al. · Journal of Crystal Growth · 124

Electrical properties and formation mechanism of porous silicon carbide

1994 · A. O. Konstantinov, C. I. Harris, et al. · Applied Physics Letters · 108

Study of avalanche breakdown and impact ionization in 4H silicon carbide

1998 · A. O. Konstantinov, Q. Wahab, et al. · Journal of Electronic Materials · 104

Determination of the electron effective-mass tensor in 4HSiC

1996 · D. Volm, B. K. Meyer, et al. · Physical review. B, Condensed matter · 92

Progress towards SiC products

2001 · C.I. Harris, S. Savage, et al. · Applied Surface Science · 90

Electron effective masses and mobilities in high-purity 6H–SiC chemical vapor deposition layers

1994 · N. T. Son, O. Kordina, et al. · Applied Physics Letters · 84

Bright-line defect formation in silicon carbide injection diodes

1997 · A. O. Konstantinov, H. Bleichner · Applied Physics Letters · 52

Temperature dependence of the photoelectric conversion quantum efficiency of 4H–SiC Schottky UV photodetectors

2005 · T V Blank, Yu A Goldberg, et al. · Semiconductor Science and Technology · 46

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The mechanism for cubic SiC formation on off-oriented substrates

1997 · A.O. Konstantinov, C. Hallin, et al. · Journal of Crystal Growth · 44

Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide

1998 · A. O. Konstantinov, N. Nordell, et al. · Applied Physics Letters · 43

The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition

1997 · C. Hallin, A.O. Konstantinov, et al. · Diamond and Related Materials · 40

2.2 kV SiC BJTs with Low VCESAT Fast Switching and Short-Circuit Capability

2010 · Martin Domeij, Carina Zaring, et al. · Materials science forum · 38

Effect of vapor composition on polytype homogeneity of epitaxial silicon carbide

1996 · A. O. Konstantinov, C. Hallin, et al. · Journal of Applied Physics · 36

Recent Developments in SiC Device Research

1999 · C. I. Harris, A. O. Konstantinov · Physica Scripta · 35

Ionization Rates and Critical Fields in 4H SiC Junction Devices

1998 · Andrey O. Konstantinov, Qamar-ul Wahab, et al. · Materials science forum · 34

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

1994 · E Janzén, O Kordina, et al. · Physica Scripta · 32

Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes

2003 · Igor V. Grekhov, Pavel A. Ivanov, et al. · Solid-State Electronics · 31

On the possibility of creating a superfast-recovery silicon carbide diode

2002 · I. V. Grekhov, P. A. Ivanov, et al. · Technical Physics Letters · 24

Material defects in 4H-silicon carbide diodes

2002 · Uwe Zimmermann, John Österman, et al. · Journal of Applied Physics · 23

High Energy Resolution Detectors Based on 4H-SiC

2005 · Alexander M. Ivanov, Evgenia V. Kalinina, et al. · Materials science forum · 20

High-dose Al-implanted 4H-SiC p+-n-n+ junctions

2000 · E. Kalinina, G. Kholujanov, et al. · Applied Physics Letters · 20

Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

2004 · E. V. Kalinina, G. F. Kholuyanov, et al. · Semiconductors · 19

Works count: 103

Citation count: 2,248

H-index: 22

I10-index: 41