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E. Scheid

Observed names: E Scheid, E. SCHEID, Emmanuel Scheid, SCHEID, Emmanuel, Scheid, Scheid, E., Scheid, Emmanuel, Scheid, Emmanuel (eds.)
Observed institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Université Toulouse III - Paul Sabatier, Laboratoire d'Analyse et d'Architecture des Systèmes, University of Trento, Institut National des Sciences Appliquées de Toulouse, Science et Ingénierie des Matériaux et Procédés, STMicroelectronics (France), Centre d’Élaboration de Matériaux et d’Études Structurales, Université de Toulouse, Universitat de Barcelona
ORCID: 0000-0001-7614-5415
Observed ORCID: 0000-0001-7614-5415
OpenAlex ID: A5014113718
Residual stress in low pressure chemical vapor deposition SiNx films deposited from silane and ammonia
1998 · P. Temple-Boyer, C. Rossi, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 181
Investigation of the initial deposition steps and the interfacial layer of Atomic Layer Deposited (ALD) Al2O3 on Si
2019 · Georgios P. Gakis, Constantin Vahlas, et al. · Applied Surface Science · 98
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Optical and structural properties of SiOx and SiNx materials
1995 · E. Dehan, P. Temple-Boyer, et al. · Thin Solid Films · 90
Detailed investigation of the surface mechanisms and their interplay with transport phenomena in alumina atomic layer deposition from TMA and water
2018 · Georgios P. Gakis, Hugues Vergnes, et al. · Chemical Engineering Science · 69
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Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane
1989 · J. L. Regolini, D. Bensahel, et al. · Applied Physics Letters · 66
Theoretical and experimental study of silicon micromachined microheater with dielectric stacked membranes
1997 · Carole Rossi, Emmanuel Scheid, et al. · Sensors and Actuators A Physical · 55
Computational Fluid Dynamics simulation of the ALD of alumina from TMA and H2O in a commercial reactor
2018 · G.P. Gakis, H. Vergnes, et al. · Process Safety and Environmental Protection · 51
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Design of a low power SnO2 gas sensor integrated on silicon oxynitride membrane
2000 · S. Astié, A.M. Gué, et al. · Sensors and Actuators B Chemical · 48
Optimization of an integrated SnO2 gas sensor using a FEM simulator
1998 · S. Astié, A.M. Gué, et al. · Sensors and Actuators A Physical · 48
Ion beam induced defects in crystalline silicon
2003 · F Cristiano, N Cherkashin, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 46
Low-loss rib waveguides containing Si nanocrystals embedded in SiO2
2005 · P. Pellegrino, B. Garrido, et al. · Journal of Applied Physics · 43
Precursor gas composition optimisation for large area boron doped nano-crystalline diamond growth by MW-LA-PECVD
2017 · A. Taylor, P. Ashcheulov, et al. · Carbon · 41
Optical study of undoped, B or P-doped polysilicon
1997 · Y. Laghla, E. Scheid · Thin Solid Films · 37
Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers
2020 · L. Dagault, S. Kerdilès, et al. · Applied Surface Science · 36
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Characterization and modelling of ageing failures on power MOSFET devices
2007 · B. Khong, M. Legros, et al. · Microelectronics Reliability · 36
Detection of Cs2Ge+ clusters for the quantification of germanium atoms by secondary ion mass spectrometry: Application to the characterization of Si1−xGex layers (⩽x⩽1) and germanium diffusion in silicon
2007 · Mathieu Gavelle, Emmanuel Scheid, et al. · Journal of Applied Physics · 32
Detailed investigation of Ge–Si interdiffusion in the full range of Si1−xGex(≤x≤1) composition
2008 · Mathieu Gavelle, El Mehdi Bazizi, et al. · Journal of Applied Physics · 31
Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors
2011 · M. Brunet, H. Mafhoz Kotb, et al. · Thin Solid Films · 30
Silicon selective epitaxial growth at reduced pressure and temperature
1989 · J.L. Regolini, D. Bensahel, et al. · Journal of Crystal Growth · 29
Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: Investigation of interfacial and structural properties
2018 · Ahmet Lale, Emmanuel Scheid, et al. · Thin Solid Films · 26
Energy study of buckled micromachined beams for thin-film stress measurements applied to SiO2
1999 · Liviu Nicu, Pierre Temple-Boyer, et al. · Journal of Micromechanics and Microengineering · 25
3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET
2008 · J.B. Sauveplane, P. Tounsi, et al. · Microelectronics Reliability · 24
Direct evidence of the recombination of silicon interstitial atoms at the silicon surface
2003 · Y. Lamrani, F. Cristiano, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 24
Boron Diffusion and Activation during Heat Treatment in Heavily Doped Polysilicon Thin Films for P+ Metal-Oxide-Semiconductor Transistors Gates
2001 · Ramdane Mahamdi, Farida Mansour, et al. · Japanese Journal of Applied Physics · 24
Thermal donor and new donor generation in SOI material formed by oxygen implantation
1985 · S. Cristoloveanu, J. Pumfrey, et al. · Electronics Letters · 24
Works count: 183
Citation count: 1,863
H-index: 24
I10-index: 52
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