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Zhijie Cheng

A Hybrid-Channel Injection Enhanced Modulation 4H-SiC IGBT Transistors With Improved Performance
2022 · Xiaochuan Deng, Zhijie Cheng, et al. · IEEE Transactions on Electron Devices · 18
A Trench and Field Limiting Rings Co-Assisted JTE Termination With N-P-N Sandwich Epitaxial Wafers for 4H-SiC Devices
2024 · Jun Yuan, Zhijie Cheng, et al. · IEEE Electron Device Letters · 14
Design and Fabrication of a Novel 1200 V 4H-SiC Trench MOSFET With Periodically Grounded Trench Bottom Shielding
2025 · Jun Yuan, Wei Chen, et al. · IEEE Transactions on Electron Devices · 11
A Novel SiC Trench MOSFET with Unilateral P Buried Layer for Improved Oxide Electric Field and Switching Loss
2023 · Yangyang Wu, Jun Yuan, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) · 8
Demonstration of a 1200V Periodic Full-P Encapsulated 4H-SiC Trench MOSFET
2023 · Jun Yuan, Zhijie Cheng, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) · 7
A Comprehensive Study on the Fabrication of a Three-Dimensional SiC Trench MOSFET with N-P-N Sandwich Epitaxial Layers
2023 · Jun Yuan, Zhijie Cheng, et al. · Asia Power and Electrical Technology Conference (APET) · 3
Molecular Structural Properties of Biaxially Oriented Grafted Polypropylene Under AC/DC Voltage Conditions
2025 · Xiaosi Lin, Liuhui Cai, et al. · Asia Power and Electrical Technology Conference (APET) · 1
Investigation and fabrication of the 1200 V 4H-SiC trench MOSFET with double p-type shielding regions and multiple current spreading layers
2025 · Wei Chen, Fei Guo, et al. · Journal of Physics Conference Series · 1
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A Bottom Charge-Modulated Field Limiting Rings Termination With N-P-N Sandwich Epitaxial Wafers for 4H-SiC Devices
2025 · Jun Yuan, Zhijie Cheng, et al. · IEEE Electron Device Letters · 1
Design and Demonstration of a Novel 4H-SiC Full-P Encapsulated Trench MOSFET with Three-Level Protection Multi-Step Gate Trench Structure
2024 · Yangyang Wu, Jun Yuan, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) · 1
A Novel Si/SiC Heterojunction Trench MOSFET with Electron Tunneling Enhanced and P+ Shielding Region for Improved On-State Resistance
2024 · Wei Chen, Jun Yuan, et al. · IEEE International Conference on Power Science and Technology (ICPST) · 1
A Novel SiC Trench MOSFET with Unilateral Deep P Buried Layer for Improved Short-circuit Capability
2024 · Yangyang Wu, Kuan Wang, et al. · IEEE International Conference on Power Science and Technology (ICPST) · 1
Periodically Grounded Trench Bottom Shielding in SiC Trench MOSFET for Enhanced Single-Event Gate Oxide Damage Hardness
2026 · Xing Zeng, Xiaochuan Deng, et al. · IEEE Transactions on Electron Devices
Demonstration of 650 V SiC Semi-Superjuncion Trench Gate MOSFET Based on Channeling Implantation and Epitaxial Process
2026 · Yangyang Wu, Wei Chen, et al. · International Conference on Electronics, Circuits and Information Engineering (ECIE)
Characterization of 1350V-0.83mΩ·cm 2 SiC Semi-Super Junction SBD Based on Multi-step Trench
2025 · Yangyang Wu, Kuan Wang, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
Demonstration of a novel double shielding and current spreading SiC trench MOSFET with high robustness
2025 · Wei Chen, Jun Yuan, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
Influence of Cable Termination Loads on Defect Localization Results
2025 · Xiaosi Lin, Chaoran Li, et al. · International Conference on Power System Technology (POWERCON)
Design and Demonstration of a Novel SiC Trench MOSFET with Periodically Grounded P Shield Island Based on Secondary Epitaxy Process
2025 · Yangyang Wu, Fei Guo, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Design and fabrication of a SiC trench MOSFET with multi-step p-type shielding and multiple CSL layers
2025 · Wei Chen, Fei Guo, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Etched field limiting rings termination based on N-P-N sandwich epitaxial wafer for high reliability 4H-SiC devices
2025 · Yangyang Wu, Fei Guo, et al. · Journal of Physics Conference Series
Design and Fabrication of a 1.2kV 4H-SiC Trench-Gate Accumulation Channel Mosfet
2024 · Zhijie Cheng, Jun Yuan, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
Design and Optimization of a Novel Full-P Encapsulated 4H-SiC Trench MOSFET with Extremely Compact Cell Pitch
2024 · Jun Yuan, Zhijie Cheng, et al. · Asia Power and Electrical Technology Conference (APET)
Effect of inductive loads on cable impedance spectrum and localization results
2024 · Xiaosi Lin, Yaqiang Deng, et al. · China International Conference on Electricity Distribution (CICED)
Extremely Compact Cell Pitch Design of a Novel Full-P Encapsulated 4H-SiC Trench MOSFET With N-P-N Sandwich Epitaxial Wafers
2024 · Jun Yuan, Zhijie Cheng, et al. · International Conference on Power and Energy Technology (ICPET)
Optimization of 1700V 4H-SiC Semi-Superjunction Schottky Diode with Multi-Step Trenched Structure
2023 · Kuan Wang, Jun Yuan, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
Works count: 25
Citation count: 67
H-index: 5
I10-index: 3
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