Author

Takao Kaneda

Observed names: T. KANEDA, T. Kaneda, Takao KANEDA

Institution: Fujitsu (Japan)

Observed institutions: NTT (Japan), Fujitsu (Japan)

OpenAlex ID: A5026972621

Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 µm

1978 · H. Ando, H. Kanbe, et al. · IEEE Journal of Quantum Electronics · 107

Impact ionization coefficients of electrons and holes in

1985 · F. Osaka, T. Mikawa, et al. · IEEE Journal of Quantum Electronics · 98

Tunneling Current in InGaAs and Optimum Design for InGaAs/InP Avalanche Photodiode

1980 · Hiroaki Ando, Hiroshi Kanbe, et al. · Japanese Journal of Applied Physics · 67

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Ionization rates for electrons and holes in GaAs

1978 · Masanori Ito, Shuzo Kagawa, et al. · Journal of Applied Physics · 62

Crystal orientation dependence of ionization rates in germanium

1980 · T. Mikawa, S. Kagawa, et al. · Applied Physics Letters · 52

Chemical Etching of Germanium with H3PO4–H2O2–H2O Solution

1982 · Shuzo Kagawa, Takashi Mikawa, et al. · Japanese Journal of Applied Physics · 41

A model for reach-through avalanche photodiodes (RAPD’s)

1976 · Takao Kaneda, Hideo Matsumoto, et al. · Journal of Applied Physics · 37

Impact ionisation ratio in In 0.73 Ga 0.27 As 0.57 P 0.43

1978 · Masanori Ito, Takao Kaneda, et al. · Electronics Letters · 36

A planar InP/InGaAsP heterostructure avalanche photodiode

1982 · T. Shirai, S. Yamazaki, et al. · IEEE Transactions on Electron Devices · 29

Tunneling currents in In0.53Ga0.47As homojunction diodes and design of InGaAs/InP hetero-structure avalanche photodiodes

1981 · Masanori Ito, Takao Kaneda, et al. · Solid-State Electronics · 29

A low-noise n+np germanium avalanche photodiode

1981 · T. Mikawa, S. Kagawa, et al. · IEEE Journal of Quantum Electronics · 29

Uniform doping of channeled-ion implantation

1978 · H. Nishi, T. Inada, et al. · Journal of Applied Physics · 29

Multiplication-dependent frequency responses of InP/InGaAs avalanche photodiode

1984 · K. Yasuda, T. Mikawa, et al. · Electronics Letters · 28

Avalanche buildup time of silicon reach-through photodiodes

1976 · Takao Kaneda, Hirobumi Takanashi, et al. · Journal of Applied Physics · 28

Planar InP/GaInAsP/GaInAs buried-structure avalanche photodiode

1984 · Masahiro Kobayashi, Susumu Yamazaki, et al. · Applied Physics Letters · 23

Avalanche buildup time of silicon avalanche photodiodes

1975 · T. Kaneda, H. Takanashi · Applied Physics Letters · 23

Improved germanium avalanche photodiodes

1980 · O. Mikami, H. Ando, et al. · IEEE Journal of Quantum Electronics · 22

Excess noise in silicon avalanche photodiodes

1976 · T. Kaneda, H. Matsumoto, et al. · Journal of Applied Physics · 22

Fully ion-implanted p+-n germanium avalanche photodiodes

1981 · S. Kagawa, T. Kaneda, et al. · Applied Physics Letters · 21

An n+-n-p germanium avalanche photodiode

1980 · T. Kaneda, S. Kagawa, et al. · Applied Physics Letters · 21

Shallow-junction p+-n germanium avalanche photodiodes (APD’s)

1979 · T. Kaneda, H. Fukuda, et al. · Applied Physics Letters · 21

InGaAs avalanche photodiodes for 1 μm wavelength region

1983 · T. Shirai, T. Mikawa, et al. · Electronics Letters · 19

Heterojunction Effect on Spectral and Frequency Responses in InP/InGaAsP/InGaAs APD

1983 · Kazuhito Yasuda, Tatsunori Shirai, et al. · Japanese Journal of Applied Physics · 19

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Avalanche Built-Up Time of the Germanium Avalanche Photodiode

1973 · Takao Kaneda, Hirofumi Takanashi · Japanese Journal of Applied Physics · 19

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Chapter 3 Silicon and Germanium Avalanche Photodiodes

1985 · Takao Kaneda · Semiconductors and semimetals · 18

Works count: 58

Citation count: 1,098

H-index: 21

I10-index: 32