Author

Gheorghe Brezeanu

Observed names: Brezeanu, G., G Brezeanu, G. Brezeanu, Gh Brezeanu, Gheorghe BREZEANU

Institution: Universitatea Națională de Știință și Tehnologie Politehnica București

Observed institutions: Consejo Superior de Investigaciones Científicas, University of Bucharest, Military Technical Academy, Microchip Technology (United States), Centro Nacional de Microbiologia, National Institute for Research and Development in Microtechnologies, Centro Nacional de Microelectrónica, Universitatea Națională de Știință și Tehnologie Politehnica București, Universitat Politècnica de Catalunya

ORCID: 0000-0002-9026-3992

Observed ORCID: 0000-0002-9026-3992

OpenAlex ID: A5032290213

Variable Off-Time Control Loop for Current-Mode Floating Buck Converters in LED Driving Applications

2014 · Vlad Anghel, Christopher Bartholomeusz, et al. · IEEE Journal of Solid-State Circuits · 45

High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures

1996 · J. Fernández, P. Godignon, et al. · Solid-State Electronics · 45

Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

2000 · N.S. Savkina, A.A. Lebedev, et al. · Materials Science and Engineering B · 44

Characterization of non-uniform Ni/4H-SiC Schottky diodes for improved responsivity in high-temperature sensing

2019 · G. Pristavu, G. Brezeanu, et al. · Materials Science in Semiconductor Processing · 40

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

2001 · G. Brezeanu, M. Badila, et al. · IEEE Transactions on Electron Devices · 36

Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior

2017 · G. Brezeanu, G. Pristavu, et al. · Journal of Applied Physics · 33

A model to non-uniform Ni Schottky contact on SiC annealed at elevated temperatures

2015 · G. Pristavu, G. Brezeanu, et al. · Applied Physics Letters · 29

The electron irradiation effects on silicon gate dioxide used for power MOS devices

2001 · M. Badila, Ph. Godignon, et al. · Microelectronics Reliability · 28

Extreme environment temperature sensor based on silicon carbide Schottky Diode

2009 · Ioana Josan, C. Boianceanu, et al. · CAS proceedings · 27

400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments

2019 · Florin Draghici, Gheorghe Brezeanu, et al. · Sensors · 26

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4H-SiC Schottky Diodes for Temperature Sensing Applications in Harsh Environments

2011 · Gheorghe Brezeanu, Florin Draghici, et al. · Materials science forum · 26

High temperature sensors based on silicon carbide (SiC) devices

2015 · Gheorghe Brezeanu, Marian Badila, et al. · CAS proceedings · 25

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

2021 · Razvan Pascu, Gheorghe Pristavu, et al. · Sensors · 24

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Schottky Contacts to Silicon Carbide: Physics, Technology and Applications

2018 · M. Saggio, S. Rascunà, et al. · Materials research foundations · 24

Termination Structures for Diamond Schottky Barrier Diodes

2006 · M. Brezeanu, M. Avram, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 17

Enhanced Non-Uniformity Modeling of 4H-SiC Schottky Diode Characteristics Over Wide High Temperature and Forward Bias Ranges

2020 · Gheorghe Brezeanu, Gheorghe Pristavu, et al. · IEEE Journal of the Electron Devices Society · 16

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

2002 · A. Mihaila, F. Udrea, et al. · CAS proceedings · 16

Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

2007 · M. Brezeanu, T. Butler, et al. · Diamond and Related Materials · 15

Silicon carbide Schottky and ohmic contact process dependence

2002 · M. Badila, G. Brezeanu, et al. · Diamond and Related Materials · 14

Contributions to development of high power SiC-IGBT

2005 · M. Avram, G. Brezeanu, et al. · CAS proceedings · 13

Analysis of static and dynamic behaviour of SiC and Si devices connected in cascode configuration

2002 · A. Mihaila, F. Udrea, et al. · CAS proceedings · 13