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V.G.K. Reddi
Observed names:
V. G. K. Reddi,
V. Reddi,
V.G. Krishna Reddi,
V.K.G. Reddi
Observed institution:
Fairchild Semiconductor (United States)
OpenAlex ID:
A5035060439
Avalanche injection and second breakdown in transistors
1970
·
P.L. Hower
, V.G. Krishna Reddi
·
IEEE Transactions on Electron Devices
·
235
Frequency dependence of the reverse-biased capacitance of gold-doped silicon P+N step junctions
1964
·
C.T. Sah
, V.G.K. Reddi
·
IEEE Transactions on Electron Devices
·
163
Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)
1965
·
V.G.K. Reddi
, C.T. Sah
·
IEEE Transactions on Electron Devices
·
82
Influence of surface conditions on silicon planar transistor current gain
1967
·
V.G.K. Reddi
·
Solid-State Electronics
·
80
Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantations
1973
·
T. R. Cass
, V. G. K. Reddi
·
Applied Physics Letters
·
54
Channeling and dechanneling of ion-implanted phosphorus in silicon
1973
·
V. G. K. Reddi
, J. D. Sansbury
·
Journal of Applied Physics
·
45
Majority carrier surface mobilities in thermally oxidized silicon
1968
·
V.G. Krishna Reddi
·
IEEE Transactions on Electron Devices
·
21
Tunable high-pass filter characteristics of a special MOS transistor
1965
·
V.G.K. Reddi
·
IEEE Transactions on Electron Devices
·
15
Channeling of Phosphorous Ions in Silicon
1972
·
V. G. K. Reddi
, J. D. Sansbury
·
Applied Physics Letters
·
12
X-band oscillator and amplifier experiments using avalanche diode periodic structures
1969
·
F. Ivanek
, V. Reddi
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
7
Injection of minority carriers at a field-induced junction near the Si-SiO2interface
1966
·
V.G.K. Reddi
·
IEEE Transactions on Electron Devices
·
6
Investigation of waveguide-below cutoff resonators for solid-state active devices
1969
·
F. Ivanek
, M. Shyam
, et al.
·
Electronics Letters
·
5
Modular approach to higher-power avalanche-diode oscillators
1968
·
F. Ivanek
, V.G.K. Reddi
·
Electronics Letters
·
4
Electrical breakdown phenomena in gold-doped silicon
1962
·
J.F. Gibbons
, V.K.G. Reddi
·
IRE Transactions on Electron Devices
·
2
Profiles of ion-implanted phosphorus in silicon: channeling and dechanneling
1971
·
V.G.K. Reddi
, J.D. Sansbury
·
Technical digest - International Electron Devices Meeting/Technical digest
Mode identification for an oscillator using solid-state active devices in a waveguide-below-cutoff resonator
1970
·
F. Ivanek
, V.G.K. Reddi
, et al.
·
Electronics Letters
Design of silicon planar diodes for avalanche transit time oscillators
1969
·
V.G.K. Reddi
·
Technical digest - International Electron Devices Meeting/Technical digest
Influence of surface conditions on silicon transistor current gain (hFE)
1966
·
V.G.K. Reddi
·
IEEE Transactions on Electron Devices
Tunable high-pass filter characteristics of a special MOS transistor
1965
·
V.G.K. Reddi
·
IEEE Transactions on Electron Devices
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Works count:
19
Citation count:
731
H-index:
9
I10-index:
9
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