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Kunihiko Uwai

Observed names: K Uwai, K. Uwai, Kunihiko UWAI, Kunihiko Uwai Kunihiko Uwai
OpenAlex ID: A5037582998
Intra-4f-shell luminescence excitation and quenching mechanism of Yb in InP
1989 · K. Takahei, A. Taguchi, et al. · Journal of Applied Physics · 118
Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor deposition
1988 · Peter S. Whitney, Kunihiko Uwai, et al. · Applied Physics Letters · 106
Yb-doped InP grown by metalorganic chemical vapor deposition
1987 · Kunihiko Uwai, Hiroshi Nakagome, et al. · Applied Physics Letters · 65
Er-doped InP and GaAs grown by metalorganic chemical vapor deposition
1987 · Kunihiko Uwai, Hiroshi Nakagome, et al. · Applied Physics Letters · 57
Extremely sharp erbium-related intra-4f-shell photoluminescence of erbium-doped GaAs grown by metalorganic chemical vapor deposition
1988 · Hiroshi Nakagome, Kunihiko Uwai, et al. · Applied Physics Letters · 54
Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 µm
1988 · P.S. Whitney, K. Uwai, et al. · Electronics Letters · 49
Surface Termination Effect on Reflectance Spectra of GaAs
1997 · Kunihiko Uwai, Naoki Kobayashi · Physical Review Letters · 44
Temperature dependence of intra-4f-shell photo- and electroluminescence spectra for erbium-doped GaAs
1989 · Kenichiro Takahei, Peter S. Whitney, et al. · Journal of Applied Physics · 42
Spectral Observation of As-Stabilized GaAs Surfaces in Metal-Organic Chemical Vapor Deposition Using Surface Photo-Absorption
1993 · Yoshiharu Yamauchi, Kunihiko Uwai Kunihiko Uwai, et al. · Japanese Journal of Applied Physics · 34
GaAs Quantum-Wire Laser Using Fractional Layer Superlattice
1993 · Hisao Saito, Kunihiko Uwai Kunihiko Uwai, et al. · Japanese Journal of Applied Physics · 32
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Phase Diagram of GaAs (111)B Surface during Metal-Organic Chemical Vapor Deposition Measured by Surface Photo-Absorption
1995 · Toshio Nishida, Kunihiko Uwai, et al. · Japanese Journal of Applied Physics · 30
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Growth of erbium-doped GaAs and InP by metalorganic chemical vapor deposition using Er(CH3C5H4)3 and Er(C5H5)3
1988 · Kunihiko Uwai, Hiroshi Nakagome, et al. · Journal of Crystal Growth · 26
In situ observation of nitridation of GaAs (001) surfaces by infrared reflectance spectroscopy
1996 · Kunihiko Uwai, Yoshiharu Yamauchi, et al. · Applied Surface Science · 21
An electron trap related to phosphorus deficiency in high-purity InP grown by metalorganic chemical vapor deposition
1989 · Norio Yamamoto, Kunihiko Uwai, et al. · Journal of Applied Physics · 21
In Situ Monitoring of Adsorption and Desorption of Atomic Nitrogen on GaAs (001) and (111)A Surfaces
1996 · Yoshiharu Yamauchi Yoshiharu Yamauchi, Kunihiko Uwai Kunihiko Uwai, et al. · Japanese Journal of Applied Physics · 20
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Origin of surface reflectance spectrum during epitaxy
1997 · Naoki Kobayashi, Yasuyuki Kobayashi, et al. · Journal of Crystal Growth · 16
Chemical trend observed in anisotropic surface reflectance spectra of MOVPE by surface photoabsorption
1997 · Naoki Kobayashi, Yasuyuki Kobayashi, et al. · Journal of Crystal Growth · 16
Effects of Substrate Temperatures and V/III Ratios on Epitaxial InP Grown by Metalorganic Chemical Vapor Deposition
1984 · Kunihiko Uwai, Nobuhiko Susa, et al. · Japanese Journal of Applied Physics · 16
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Photoluminescence of InP Doping Superlattice Grown by Vapor Phase Epitaxy
1984 · Yoshiharu Yamauchi, Kunihiko Uwai, et al. · Japanese Journal of Applied Physics · 15
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Dielectric response of As-stabilized GaAs surfaces observed by surface photo-absorption
1994 · Kunihiko Uwai, Naoki Kobayashi · Applied Physics Letters · 13
Step ordering during fractional-layer superlattice growth on GaAs(001) vicinal surfaces by metalorganic chemical vapor deposition
1993 · H. Saito, K. Uwai, et al. · Applied Physics Letters · 13
Identification of acceptors and donors in high-purity InP grown by metalorganic chemical vapor deposition
1987 · Kunihiko Uwai, Syoji Yamada, et al. · Journal of Applied Physics · 13
In situ observation of superstructures on InP(0 0 1) surface under hydrogen atmospheric environment with using grazing incidence X-ray diffraction
2000 · T Kawamura, Y Watanabe, et al. · Journal of Crystal Growth · 12
Photoluminescence characterization of rare-earth (Er, Yb)-doped InP grown by metalorganic chemical vapor deposition
1988 · Kenichiro Takahei, Kunihiko Uwai, et al. · Journal of Luminescence · 12
Arsenic Coverages and Surface Structures of As-Stabilized GaAs (001) Surfaces during Metalorganic Chemical Vapor Deposition Observed by Reflectance Difference
1993 · Kunihiko Uwai, Hisao Saito, et al. · Japanese Journal of Applied Physics · 11
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Works count: 43
Citation count: 919
H-index: 16
I10-index: 25
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