Author

K. Haberger

Observed names: Haberger, K., Haberger, Karl, Karl Haberger, Karl Haberger Karl Haberger

Observed institutions: Siemens (Germany), Fraunhofer Research Institution for Microsystems and Solid State Technologies, Fraunhofer Institute for Reliability and Microintegration, Fraunhofer-Gesellschaft

OpenAlex ID: A5056758423

High performance forced air cooling scheme employing microchannel heat exchangers

1995 · M.B. Kleiner, S.A. Kuhn, et al. · IEEE Transactions on Components Packaging and Manufacturing Technology Part A · 138

Simulation of doping processes

1980 · H. Ryssel, K. Haberger, et al. · IEEE Transactions on Electron Devices · 86

High concentration effects of ion implanted boron in silicon

1980 · H. Ryssel, K. Müller, et al. · Applied Physics A · 78

Ion-beam sensitivity of polymer resists

1981 · H. Ryssel, K. Haberger, et al. · Journal of Vacuum Science and Technology · 64

Maskless patterning of indium tin oxide layer for flat panel displays by diode-pumped Nd:YLF laser irradiation

1994 · M. Takai, D. Bollmann, et al. · Applied Physics Letters · 55

Arsenic-implanted polysilicon layers

1981 · H. Ryssel, H. Iberl, et al. · Applied Physics A · 39

Range parameters of boron implanted into silicon

1981 · H. Ryssel, G. Prinke, et al. · Applied Physics B · 35

Dopant dependence of the oxidation rate of ion implanted silicon

1980 · J. F. Götzlich, K. Haberger, et al. · Radiation Effects · 34

Simulation of Doping Processes

1980 · H. Ryssel, K. Haberger, et al. · IEEE Journal of Solid-State Circuits · 13

Ion beam exposure of resists

1982 · H. Ryssel, G. Prinke, et al. · Applied Physics A · 12

High performance air cooling scheme using ducted microchannel parallel plate-fin heat sinks

2002 · M.B. Kleiner, S.A. Kuehn, et al. · Annual IEEE Semiconductor Thermal Measurement and Management Symposium/Proceedings · 8

Analysis of Wafer Bonding by Infrared Transmission

1996 · Dieter Bollmann Dieter Bollmann, Christof Landesberger Christof Landesberger, et al. · Japanese Journal of Applied Physics · 8

Measurement of wafer temperature by interference

1992 · D. Bollmann, K. Haberger · Microelectronic Engineering · 7

Ultra-flat p-n junctions formed by solid source laser doping

1990 · G. Stock, D. Bollmann, et al. · Applied Surface Science · 6

The application of the (n, α) method for boron depth profiling and channeling-blocking measurements in semiconductor materials

1980 · K. Müller, R. Henkelmann, et al. · Nuclear Instruments and Methods · 6

Process technology for 3D-CMOS devices

1989 · R. Buchner, W. van der Wel, et al. · IEEE SOS/SOI Technology Conference · 5

Shallow p-n junctions produced by laser doping with boron silicate glass

1993 · D. Bollmann, G. Neumayer, et al. · Applied Surface Science · 4

Quantitative Investigation of As Segregation at the SiO2/Si Interface by SIMS and RBS

1984 · H. Frenzel, J. L. Maul, et al. · Springer series in chemical physics · 4

Laser Recrystallization of Polysilicon for Improved Device Quality

1989 · R. Buchner, K. Haberger, et al. · Springer proceedings in physics · 3

Ion Implantation: Safety and Radiation Considerations

1984 · Heiner Ryssel, Karl Haberger · Elsevier eBooks · 3

Avoidance of Substrate Damage upon Laser Recrystallization of a SOI Layer

1991 · W. van der Wel, R. Buchner, et al. · Journal of The Electrochemical Society · 2

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Laser evaporation of metal sandwich layers for improved IC metallization

1990 · R. Pielmeier, D. Bollmann, et al. · Applied Surface Science · 2

Liquid phase epitaxy of silicon at low temperatures

1990 · F. Kresse, G.G. Baumann, et al. · Journal of Crystal Growth · 2

3D CMOS devices in recrystallized silicon

1990 · R. Buchner, K. Haberger, et al. · Microelectronics Journal · 2

Extreme thin integrated circuits

1995 · K. Haberger, D. Bollmann, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 1

Works count: 101

Citation count: 621

H-index: 10

I10-index: 10