Get started
Author

Jeffrey Xu

Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking
2022 · Xinlv Duan, Kailiang Huang, et al. · IEEE Transactions on Electron Devices · 203
Two-dimensional materials for future information technology: status and prospects
2024 · Hao Qiu, Zhihao Yu, et al. · Science China Information Sciences · 121
Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation
2025 · Aiji Wang, Rui Chen, et al. · Advanced Functional Materials · 81
The Role of Oxygen Vacancy and Hydrogen on the PBTI Reliability of ALD IGZO Transistors and Process Optimization
2024 · Zhiyu Lin, Lu Kang, et al. · IEEE Transactions on Electron Devices · 52
High drain field impact ionization transistors as ideal switches
2024 · Baowei Yuan, Zhibo Chen, et al. · Nature Communications · 25
PDF
High-performance Vertical Gate-All-Around Oxide Semiconductor Transistors with 6 nm ALD IGZO Channel and Scaled Contact CD down to 28 nm
2024 · Wanpeng Zhao, Wei Cui, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 22
Scaling MoS 2 Transistors to 1 nm Node
2024 · Weisheng Li, Mingyi Du, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
The Critical Role of Passivation Layer and Semiconductor Interface on the Hydrogen Stability of ALD IGZO Transistors
2025 · Zhiyu Lin, Lu Kang, et al. · IEEE Transactions on Electron Devices · 9
Universal PBTI Relaxation on the Negative VTH Shift in Oxide Semiconductor Transistors and New Insights
2023 · Zhiyu Lin, Jinxiu Zhao, et al. · IEEE Electron Device Letters · 9
Are There High-Density Deep States in an Atomic-Layer-Deposited Indium–Gallium–Zinc Oxide Thin Film?
2025 · Liankai Zheng, Lijuan Xing, et al. · Nano Letters · 7
PDF
Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)
2024 · Kun Zhong, Fan Zhang, et al. · IEEE Electron Device Letters · 7
First Direct Observation of Two Different Hydrogen-Related Processes Corresponding to the Negative V TH Shift Under PBTI Stress in IGZO Transistors by Pd Hydrogen Spillover
2025 · Zhiyu Lin, Lu Kang, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 6
Gallium oxide/indium gallium zinc oxide heterojunction Schottky barrier thin-film transistors with ultrahigh 2D electron density over 6 × 1013/cm2
2025 · Jinxiu Zhao, Zhiyu Lin, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 6
An Al-Drain Silicon Transistor With Ultra-Steep Subthreshold Slope and Low Operating Voltage
2025 · Zhibo Chen, Weiao Chen, et al. · IEEE Electron Device Letters · 5
Steric Hindrance and Film Quality in HfO2 Atomic Layer Deposition: Comparative Kinetic Monte Carlo Simulation of TEMA-Hf and HfCp(NMe2)3 Precursors
2025 · Haojie Li, Yanwei Wen, et al. · Chemistry of Materials · 3
A bit-parallel molybdenum disulfide computer built through multi-level co-optimization
2026 · Dongxu Fan, Yun Mao, et al. · Nature Electronics · 2
Calcium doping-induced metal–insulator transition in SrTiO3-based two-dimensional electron gas
2025 · Lai Wei, Chen-Min Dai, et al. · Applied Physics Letters · 2
A Monolithic Dual-Layer Pixel Design with BEOL IGZO Transistors Featuring High Dual Conversion Gain Ratio and Scaled Pixel Size for Future Image Sensors
2025 · Shijie Zhan, Kishou Kaneko, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2
27‐3: Invited Paper: High‐Performance Sub‐50nm Channel Length 3D Monolithically Stackable Vertical IGZO TFTs for Active‐Matrix Application
2022 · Xinlv Duan, Kailiang Huang, et al. · SID Symposium Digest of Technical Papers · 1
Author Correction: Scaled crystalline antimony ohmic contacts for two-dimensional transistors
2026 · Mingyi Du, Weisheng Li, et al. · Nature Electronics
PDF
Ultrasteep Subthreshold Slope Metal-Drain Dual-Type (p/n) Silicon Transistors: Characterization, Analysis, and Application
2025 · Zhibo Chen, Baowei Yuan, et al. · IEEE Transactions on Electron Devices
Reduction of Specific Contact Resistivity by Employing Pre-Amorphization Implantation and In-Situ Steam Generation Oxidation
2024 · Chang Liu, Xu Chen, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology
Works count: 23
Citation count: 575
H-index: 9
I10-index: 7
Year
Topic
Type