Author

G. Raskin

Observed name: G Raskin

Observed institutions: Umicore (Belgium), Umicore (United States)

OpenAlex ID: A5068803028

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

2005 · B. De Jaeger, R. Bonzom, et al. · Microelectronic Engineering · 96

A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface

2005 · Bart Onsia, Thierry Conard, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 91

Active dopant characterization methodology for germanium

2006 · T. Clarysse, P. Eyben, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 31

Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium

2004 · Jan Vanhellemont, Olivier De Gryse, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 21

The future of high-K on pure germanium and its importance for Ge CMOS

2004 · M. Meuris, A. Delabie, et al. · Materials Science in Semiconductor Processing · 18

Germanium-on-insulator (GeOI) structures realized by the Smart Cut/spl trade/ technology

2005 · C. Deguet, C. Morales, et al. · IEEE International SOI Conference (SOI) · 14

200mm Germanium-On-Insulator (GeOI) by Smart Cut™ technology and recent GeOI pMOSFETs achievements.

2006 · T. Akatsu, C. Deguet, et al. · IEEE International SOI Conference (SOI) · 13

Determination of metallic contaminants on Ge wafers using direct- and droplet sandwich etch-total reflection X-ray fluorescence spectrometry

2003 · D Hellin, T Bearda, et al. · Spectrochimica Acta Part B Atomic Spectroscopy · 13

Ge deep sub-micron pFETs with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm silicon prototyping line

2004 · B. De Jaeger, M. Houssa, et al. · European Solid-State Circuits Conference (ESSCIRC) · 10

Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers

2005 · D. Hellin, V. Geens, et al. · Spectrochimica Acta Part B Atomic Spectroscopy · 9

Advanced GaInP/Ga(In)As/Ge triple junction space solar cells

2002 · G. Strobl, R. Dietrich, et al. · Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) · 9

A Study of the Influence of Typical Wet Chemical Treatments on the Germanium Wafer Surface

2005 · Bart Onsia, Thierry Conard, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4

Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates

2007 · M. Meuris, B. Jaeger, et al. · Springer eBooks · 2

VPD-DC-TXRF for Metallic Contamination Analysis of Ge Wafers

2005 · David Hellin, V. Geens, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2

VPD-DC-TXRF for Metallic Contamination Analysis of Ge Wafers

2005 · David Hellin, V. Geens, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2

Germanium deep-sub micron PMOS transistors with etched TaN metal gate on a high-k dielectric, fabricated in a 200mm prototyping line

2004 · Marc Meuris, Brice De Jaeger, et al. · 1

Works count: 16

Citation count: 336

H-index: 9

I10-index: 9