Get started
Author

Bernd Ebersberger

Observed names: B Ebersberger, B. Ebersberger
OpenAlex ID: A5075790452
Conducting atomic force microscopy for nanoscale electrical characterization of thin SiO2
1998 · Alexander Olbrich, Bernd Ebersberger, et al. · Applied Physics Letters · 179
Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscope
2002 · M. Porti, M. Nafrı́a, et al. · Journal of Applied Physics · 115
Cu pillar bumps as a lead-free drop-in replacement for solder-bumped, flip-chip interconnects
2008 · Bernd Ebersberger, Charles Lee · IEEE Electronic Components and Technology Conference (ECTC) · 56
Nanometer-scale electrical characterization of stressed ultrathin SiO2 films using conducting atomic force microscopy
2001 · M. Porti, M. Nafrı́a, et al. · Applied Physics Letters · 54
PDF
High aspect ratio all diamond tips formed by focused ion beam for conducting atomic force microscopy
1999 · A. Olbrich, B. Ebersberger, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 50
Tungsten Chemical Mechanical Polishing
1998 · Norbert Elbel, Bernhard Neureither, et al. · Journal of The Electrochemical Society · 45
PDF
Reliability of lead-free SnAg solder bumps: influence of electromigration and temperature
2005 · B. Ebersberger, R. Bauer, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 43
Oxide thickness mapping of ultrathin Al2O3 at nanometer scale with conducting atomic force microscopy
2001 · Alexander Olbrich, Bernd Ebersberger, et al. · Applied Physics Letters · 27
Qualification of SnAg solder bumps for lead-free flip chip applications
2004 · B. Ebersberger, R. Bauer, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 20
Nanoscale electrical characterization of thin oxides with conducting atomic force microscopy
1998 · A. Olbrich, B. Ebersberger, et al. · IEEE International Reliability Physics Symposium proceedings · 19
Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy
2001 · M Porti, M Nafrı́a, et al. · Microelectronic Engineering · 18
Equilibrium defect density in hydrogenated amorphous germanium
1994 · B. Ebersberger, W. Krühler, et al. · Applied Physics Letters · 15
Consideration of temperature and current stress testing on flip chip solder interconnects
2008 · Alfred Yeo, Bernd Ebersberger, et al. · Microelectronics Reliability · 10
A new AFM-based tool for testing dielectric quality and reliability on a nanometer scale
1999 · Alexander Olbrich, Bernd Ebersberger, et al. · Microelectronics Reliability · 9
Application of SCM for the microcharacterization of semiconductor devices
2003 · G. Zimmermann, A. Born, et al. · Applied Physics A · 8
Nanoscale observations of the electrical conduction of ultrathin SiO/sub 2/ films with conducting atomic force microscopy
2002 · M. Porti, M. Nafria, et al. · IEEE International Reliability Physics Symposium proceedings · 8
In-line failure analysis on productive wafers with dual-beam SEM/FIB systems
2001 · Rainer Weiland, Christian Boit, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 8
Feasibility of the electrical characterization of single SiO2 breakdown spots using C-AFM
2001 · M. Porti, R. Rodrı́guez, et al. · Journal of Non-Crystalline Solids · 6
Wafer Conserving Full Range Construction Analysis for IC Fabrication and Process Development Based on FIB/Dual Beam Inline Application
2000 · R. Weiland, C. Boit, et al. · Proceedings - International Symposium for Testing and Failure Analysis · 6
Thickness mapping of thin dielectrics with emission microscopy and conductive atomic force microscopy for assessment of dielectrics reliability
1996 · B. Ebersberger, C. Boit, et al. · IEEE International Reliability Physics Symposium proceedings · 6
Pre- and post-breakdown switching behaviour in ultrathin SiO2layers detected by C-AFM
2001 · M Porti, X Blasco, et al. · Nanotechnology · 5
Post-breakdown electrical characterization of ultrathin SiO2 films with conductive atomic force microscopy
2002 · M Porti, M Nafría, et al. · Nanotechnology · 4
PDF
Application of Scanning Probe Microscopy techniques in Semiconductor Failure Analysis
2001 · B. Ebersberger, A. Olbrich, et al. · Microelectronics Reliability · 4
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope
2001 · M Porti, X Blasco, et al. · Microelectronics Reliability · 3
Scanning probe microscopy in semiconductor failure analysis
2001 · B Ebersberger, A Olbrich, et al. · Microelectronics Reliability · 2
Works count: 27
Citation count: 722
H-index: 12
I10-index: 13
Year
Topic
Type