Author

R. Lal

Observed names: R Lal, R.K. Lal, S. Lal, Shatrohan Lal

Institution: Renesas Electronics (United States)

Observed institutions: Babasaheb Bhimrao Ambedkar University, Indian Institute of Technology Bombay, Indian Council of Agricultural Research, Transphorm (United States), Central Institute For Subtropical Horticulture, Renesas Electronics (United States)

ORCID: 0000-0003-1950-7365

Observed ORCID: 0000-0003-1950-7365

OpenAlex ID: A5102789053

Mechanism and kinetics of chlorpyrifos co-metabolism by using environment restoring microbes isolated from rhizosphere of horticultural crops under subtropics

2022 · Govind Kumar, Shatrohan Lal, et al. · Frontiers in Microbiology · 77

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Bacterial biosurfactants can be an ecofriendly and advanced technology for remediation of heavy metals and co-contaminated soil

2016 · A. J. Das, S. Lal, et al. · International Journal of Environmental Science and Technology · 70

Macroporous silicon based capacitive affinity sensor—fabrication and electrochemical studies

2003 · C.A. Betty, R. Lal, et al. · Sensors and Actuators B Chemical · 58

Exploration of Klebsiella pneumoniae M6 for paclobutrazol degradation, plant growth attributes, and biocontrol action under subtropical ecosystem

2021 · Govind Kumar, Shatrohan Lal, et al. · PLoS ONE · 55

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1200V GaN Switches on Sapphire Substrate

2022 · G. Gupta, M. Kanamura, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 53

Exploring the survival tactics and plant growth promising traits of root-associated bacterial strains under Cd and Pb stress: A modelling based approach

2018 · Shatrohan Lal, Rajesh Kumar, et al. · Ecotoxicology and Environmental Safety · 32

The design and implementation of a low-power clock-powered microprocessor

2000 · W. Athas, N. Tzartzanis, et al. · IEEE Journal of Solid-State Circuits · 32

1200V GaN Switches on Sapphire: A low-cost, high-performance platform for EV and industrial applications

2022 · G. Gupta, M. Kanamura, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31

Electrochemistry of polyaniline Langmuir–Blodgett films

1998 · R.B. Dabke, A. Dhanabalan, et al. · Thin Solid Films · 27

(Invited)650 Volt GaN Commercialization Reaches Automotive Standards

2017 · Primit Parikh, Kurt Smith, et al. · ECS Transactions · 25

Mechanisms and kinetics for the degradation of paclobutrazol and biocontrol action of a novel Pseudomonas putida strain T7

2021 · Govind Kumar, Shatrohan Lal, et al. · Pesticide Biochemistry and Physiology · 23

Bacterial structure and dynamics in mango (Mangifera indica) orchards after long term organic and conventional treatments under subtropical ecosystem

2021 · Govind Kumar, Archana Suman, et al. · Scientific Reports · 19

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Lifetime tests of 600-V GaN-on-Si power switches and HEMTs

2015 · K.V. Smith, J. Haller, et al. · Microelectronics Reliability · 18

Impedance model of electrolyte–insulator–semiconductor structure with porous silicon semiconductor

2009 · C.A. Betty, R. Lal, et al. · Electrochimica Acta · 15

Time response and stability of porous silicon capacitive immunosensors

2006 · C.A. Betty, R. Lal, et al. · Biosensors and Bioelectronics · 15

SEU reliability analysis of advanced deep-submicron transistors

2005 · P. Jain, J. Vasi, et al. · IEEE Transactions on Device and Materials Reliability · 13

An Accurate Compact Model for GaN Power Switches with the Physics-based ASM-HEMT Model

2021 · Sourabh Khandelwal, M. Labrecque, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 10

The DNA SET: a novel device for single-molecule DNA sequencing

2004 · P. Mali, R.K. Lal · IEEE Transactions on Electron Devices · 10

GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges

2018 · P. Parikh, Y. Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9

Device degradation of n-channel poly-Si TFTs due to high-field, hot-carrier and radiation stressing

2002 · A. Khamesra, R. Lal, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 8

Degradation of oxides in metal-oxide-semiconductor capacitors under high-field stress

1993 · R. M. Patrikar, R. Lal, et al. · Journal of Applied Physics · 7

High field characteristics of metal-oxide-semiconductor capacitors with the silicon in inversion

1993 · R. M. Patrikar, R. Lal, et al. · Journal of Applied Physics · 5

Field acceleration factor for dielectric breakdown of MOS devices

1989 · R.M. Patrikar, R. Lal · Microelectronics Reliability · 5