Author

M. Takeuchi

Observed name: M Takeuchi

Institution: National Institute for Materials Science

Observed institutions: Tokyo Institute of Technology, Ritsumeikan University, National Institute for Materials Science, Kyushu Institute of Technology, Advanced Telecommunications Research Institute International, RIKEN, Ritsumeikan Global Innovation Research Organization, The Institute of Scientific and Industrial Research, The University of Osaka, The University of Osaka

OpenAlex ID: A5109306760

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

2007 · M. Takeuchi, H. Shimizu, et al. · Journal of Crystal Growth · 75

Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD

2006 · M. Takeuchi, H. Shimizu, et al. · Journal of Crystal Growth · 54

Kelvin probe force microscopy on InAs thin films grown on GaAs giant step structures formed on (110) GaAs vicinal substrates

2001 · S. Ono, M. Takeuchi, et al. · Applied Physics Letters · 30

AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current

2009 · T. Nanjo, M. Takeuchi, et al. · Electronics Letters · 21

Effect of surface irregularities on diamond Schottky barrier diode with threading dislocations

2022 · N. Mikata, M. Takeuchi, et al. · Diamond and Related Materials · 10

Selectivity control of Stark-ladder transitions in asymmetric double-well GaAs/AlAs superlattices by barrier sequence modulation

1998 · M. Takeuchi, T. Imanishi, et al. · Physica E Low-dimensional Systems and Nanostructures · 6

Photo- and cathodoluminescence of AlGaAs single quantum wires on vicinal GaAs (110) surfaces

1996 · H. Nakashima, M. Takeuchi, et al. · Solid-State Electronics · 6

TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template

2006 · N. Kuwano, M. Hijikuro, et al. · Journal of Crystal Growth · 5

TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti‐surfactant treatment

2006 · M. Hijikuro, N. Kuwano, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 5

MBE growth of GaAs/AlAs double-barrier structures on GaAs channeled substrates

1991 · S. Shimomura, N. Okamoto, et al. · Journal of Crystal Growth · 5

Staggered excitonic resonances of Stark-ladder transitions in an asymmetric double-well GaAs/AlAs superlattice

1998 · T Imanishi, M Takeuchi, et al. · Physica E Low-dimensional Systems and Nanostructures · 4

Deep UV Light Emitting Diodes on AlN Templates Grown by Commercialized MOCVD (<1200°C)

2011 · M. Kurouchi, M. Takeuchi, et al. · International Conference on Solid State Devices and Materials (SSDM)

Formation of self-organized quantum dot structures and quasi-perfect CuPt-type ordering by gas-source MBE growth of (GaP)/sub n/(InP)/sub n/ superlattices

2002 · S.J. Kim, H. Asahi, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials

Barrier thickness dependence of photocurrent spectral intensity in GaAs/AlAs superlattice p-i-n diodes

1998 · K Kawasaki, K Kawashima, et al. · Microelectronic Engineering

Luminescence characterization of selforganized GaAs quantum wires: carrier capture and thermalization.

1997 · P. Fischer, J. Christen, et al.

Formation and Characterization of AlGaAs Quantum Wires on Vicinal (110) Surfaces

1995 · H. Nakashima, M. Takeuchi, et al. · International Conference on Solid State Devices and Materials (SSDM)

Works count: 16

Citation count: 221

H-index: 6

I10-index: 5