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Alexander A. Stolyarov

Observed names: A A Stolyarov, A. A. Stolyarov, A. Stolyarov, A.A. Stolyarov, Alexander Stolyarov
ORCID: 0009-0000-3785-7620
Observed ORCID: 0009-0000-3785-7620
OpenAlex ID: A5109846034
Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors
2020 · Dmitrii V. Andreev, Gennady G. Bondarenko, et al. · Sensors · 31
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Control current stress technique for the investigation of gate dielectrics of MIS devices
2015 · Vladimir V. Andreev, Gennady G. Bondarenko, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 25
Modification and reduction of defects in thin gate dielectric of MIS devices by injection‐thermal and irradiation treatments
2014 · Vladimir V. Andreev, Gennady G. Bondarenko, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 21
Modified Ramped Current Stress Technique for Monitoring Thin Dielectrics Reliability and Charge Degradation
2022 · Dmitrii V. Andreev, Vladimir M. Maslovsky, et al. · physica status solidi (a) · 17
Method of stress and measurement modes for research of thin dielectric films of MIS structures
2016 · Vladimir V. Andreev, Vladimir M. Maslovsky, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 16
Modification of MIS Devices by Radio-Frequency Plasma Treatment
2019 · D.V. Andreev, G.G. Bondarenko, et al. · Acta Physica Polonica A · 14
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Modification of MIS Devices by Irradiation and High-Field Electron Injection Treatments
2017 · D.V. Andreev, G.G. Bondarenko, et al. · Acta Physica Polonica A · 13
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Plasma and injection modification of the gate dielectric in MOS structures
2003 · G.G. Bondarenko, V.V. Andreev, et al. · Thin Solid Films · 12
Modification of Gate Dielectric in MOS Devices by Injection-Thermal and Plasma Treatments
2014 · V.V. Andreev, G.G. Bondarenko, et al. · Acta Physica Polonica A · 11
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Charge effects in dielectric films of MIS structures being under high-field injection of electrons at ionizing radiation
2019 · Vladimir M. Maslovsky, Dmitrii V. Andreev, et al. · International Conference on Micro- and Nano-Electronics (ICMNE) · 10
Multilevel current stress technique for investigation thin oxide layers of MOS structures
2012 · V V Andreev, G G Bondarenko, et al. · IOP Conference Series Materials Science and Engineering · 10
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Use of MIS Sensors of Radiation in High-Field Electron Injection Modes
2020 · V. V. Andreev, G. G. Bondarenko, et al. · Journal of Contemporary Physics (Armenian Academy of Sciences) · 8
Modification of metal-oxide-semiconductor devices by electron injection in high fields
2002 · G.G. Bondarenko, V.V. Andreev, et al. · Vacuum · 8
Method of metal-insulator-semiconductor structure interface analysis
1999 · G. G. Bondarenko, V. V. Andreev, et al. · Surface and Interface Analysis · 8
Modification of thin oxide films of MOS structure by high-field injection and irradiation
2016 · D V Andreev, G G Bondarenko, et al. · IOP Conference Series Materials Science and Engineering · 7
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Charge Effects in the Dielectric Films of MIS Structures under the Concurrent Influence of Radiation and High-Field Electron Injection
2020 · D. V. Andreev, G. G. Bondarenko, et al. · Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques · 5
Modification of bounded J-Ramp method to monitor reliability and charge degradation of gate dielectric of MIS devices
2022 · Dmitrii V. Andreev, Vladimir M. Maslovsky, et al. · International Conference on Micro- and Nano-Electronics (ICMNE) · 4
Increasing the Charge Stability of Gate Dielectric Films of MIS Structures by Doping Them with Phosphorus
2021 · D. V. Andreev, G. G. Bondarenko, et al. · Inorganic Materials Applied Research · 4
Method of stress and measurement current levels for MIS structures researching and modifying under high-field injection of electrons
2017 · D V Andreev, G G Bondarenko, et al. · IOP Conference Series Materials Science and Engineering · 4
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The investigation into charge degradation of MIS structures under strong electric field by a method of controlled current load
2000 · V. V. Andreev, V. G. Baryshev, et al. · Russian Microelectronics · 4
High-Voltage LDMOS Transistors on an SOI Structure for Electronics That Operate in Extreme Conditions
2020 · S. I. Babkin, S. I. Volkov, et al. · Russian Microelectronics · 3
Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment
2015 · V.V. Andreev, G.G. Bondarenko, et al. · Acta Physica Polonica A · 3
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Modification of dielectric films in MIS structures using the injection-thermal treatment
2015 · V. V. Andreev, G. G. Bondarenko, et al. · Inorganic Materials Applied Research · 3
Multilevel-Injection Characterization of Positive-Charge Generation and Relaxation in MOS Oxide
2003 · V. V. Andreev, V. G. Baryshev, et al. · Russian Microelectronics · 3
Automatized setup for researching of MIS structures under high-field tunnel injection of electrons at stress and measurement conditions
2018 · Dmitrii V. Andreev, Gennady G. Bondarenko, et al. · Moscow Workshop on Electronic and Networking Technologies (MWENT) · 2
Works count: 45
Citation count: 258
H-index: 10
I10-index: 11
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