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J.C. de Jaeger

Observed names: De Jaeger, J.C., De Jaeger, Jean-Claude, De Jaeger, Jean-Claude., De-Jaeger Jean-Claude, J-C De Jaeger, J-C. De Jaeger, J-C. de jaeger, J. C. DE JAEGER, J. C. De Jaeger, J. C. de Jaeger, J.-C De Jaeger, J.-C. De Jaeger, J.C. De Jaeger, J.‐C. De Jaeger, JAEGER, Jean-Claude de, Jean C. De Jaeger, Jean Claude De Jaeger, Jean Claude de Jaeger, Jean-Claude DE JAEGER, Jean-Claude De Jaeger, Jean-Claude de Jaeger, Jean‐Claude De Jaeger, de Jaeger, Jean-Claude
Observed institutions: Centre National de la Recherche Scientifique, City University of Hong Kong, Université de Lille, Royal Observatory of Belgium, Institut Supérieur de l'Électronique et du Numérique, IMEC, JUNIA, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Université Lille 1, Université Lille Nord de France, Université Polytechnique Hauts-de-France, Centrale Lille Institut, Hasselt University
ORCID: 0000-0002-9033-7672
Observed ORCID: 0000-0002-9033-7672
OpenAlex ID: A5111829464
Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
2005 · D. Ducatteau, A. Minko, et al. · IEEE Electron Device Letters · 131
AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$
2012 · S. Bouzid-Driad, H. Maher, et al. · IEEE Electron Device Letters · 130
Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design
2013 · Sourabh Khandelwal, Chandan Yadav, et al. · IEEE Transactions on Electron Devices · 127
Recent developments of wide-bandgap semiconductor based UV sensors
2008 · A. BenMoussa, A. Soltani, et al. · Diamond and Related Materials · 115
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193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors
2008 · A. Soltani, H. A. Barkad, et al. · Applied Physics Letters · 106
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress
2006 · A. Sozza, C. Dua, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 91
Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate
2015 · Philippe Altuntas, Francois Lecourt, et al. · IEEE Electron Device Letters · 84
Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices
2009 · Brahim Benbakhti, Ali Soltani, et al. · IEEE Transactions on Electron Devices · 71
High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape
2010 · M. Lesecq, V. Hoel, et al. · IEEE Electron Device Letters · 55
Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
2013 · Francois Lecourt, Alain Agboton, et al. · IEEE Electron Device Letters · 47
InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz
2011 · F. Lecourt, N. Ketteniss, et al. · IEEE Electron Device Letters · 46
Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT
2006 · A. Soltani, A. BenMoussa, et al. · Diamond and Related Materials · 45
AlGaN/GaN HEMTs on (001) Silicon Substrate With Power Density Performance of 2.9 W/mm at 10 GHz
2010 · Jean-Claude Gerbedoen, Ali Soltani, et al. · IEEE Transactions on Electron Devices · 39
Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier
2010 · Jan Kuzmik, Clemens Ostermaier, et al. · IEEE Transactions on Electron Devices · 36
Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical study
2012 · Vincent Mortet, Liang Zhang, et al. · physica status solidi (a) · 35
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Parasitic Loop Inductances Reduction in the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations
2021 · Loris Pace, Nadir Idir, et al. · Energies · 32
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Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon
2017 · Yvon Cordier, Rémi Comyn, et al. · physica status solidi (a) · 32
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Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures
2014 · G. Chicot, A. Fiori, et al. · Journal of Applied Physics · 32
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Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors
2012 · Vinod Ravindran, Mohamed Boucherit, et al. · Applied Physics Letters · 32
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Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances
2013 · Stephanie Rennesson, Francois Lecourt, et al. · IEEE Transactions on Electron Devices · 31
Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters
2019 · L. Pace, N. Defrance, et al. · IEEE Transactions on Electron Devices · 30
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Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design
2006 · G. Soubercaze-Pun, J.G. Tartarin, et al. · IEEE MTT-S International Microwave Symposium digest · 28
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Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies
2020 · Micka Bah, Damien Valente, et al. · Scientific Reports · 27
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Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: application to X-band low noise amplifiers
2005 · De Jaeger, J.C., Delage, S. L., et al. · AMS Acta (University of Bologna) · 25
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High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz
2002 · N. Vellas, C. Gaquiere, et al. · IEEE Electron Device Letters · 24
Works count: 289
Citation count: 2,073
H-index: 24
I10-index: 52
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