Author

D. Roan

Observed name: Darrell Roan

Observed institution: Motorola (United States)

OpenAlex ID: A5114007053

Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I

2004 · C.C. Hobbs, L.R.C. Fonseca, et al. · IEEE Transactions on Electron Devices · 231

Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II

2004 · C.C. Hobbs, L.R.C. Fonseca, et al. · IEEE Transactions on Electron Devices · 181

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

2004 · D. Triyoso, R. Liu, et al. · Journal of The Electrochemical Society · 171

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Fermi level pinning at the polySi/metal oxide interface

2004 · C. Hobbs, L. Fonseca, et al. · Symposium on VLSI Technology · 119

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

2002 · J. K. Schaeffer, S. B. Samavedam, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 100

Impact of Zr addition on properties of atomic layer deposited HfO2

2006 · D. H. Triyoso, R. I. Hegde, et al. · Applied Physics Letters · 83

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

2002 · D. C. Gilmer, R. Hegde, et al. · Applied Physics Letters · 80

Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition

2005 · D. H. Triyoso, R. I. Hegde, et al. · Journal of Applied Physics · 79

Challenges for the integration of metal gate electrodes

2005 · J.K. Schaeffer, C. Capasso, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 71

Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments

2004 · D. H. Triyoso, R. I. Hegde, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 69

HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium

2003 · J. Schaeffer, N. V. Edwards, et al. · Journal of The Electrochemical Society · 61

Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics

2007 · D. H. Triyoso, R. I. Hegde, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 52

Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition

2005 · D. H. Triyoso, R. I. Hegde, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 47

Physical and Electrical Characteristics of HfO[sub 2] Gate Dielectrics Deposited by ALD and MOCVD

2005 · D. H. Triyoso, M. Ramon, et al. · Journal of The Electrochemical Society · 33

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Mixed-signal performance of sub-100nm fully-depleted SOI devices with metal gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

2004 · A. Vandooren, A.V.Y. Thean, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27

Compatibility of silicon gates with hafnium-based gate dielectrics

2003 · D.C. Gilmer, R. Hegde, et al. · Microelectronic Engineering · 26

Fermi level pinning with sub-monolayer MeOx and metal gates [MOSFETs]

2004 · S.B. Samavedam, L.B. La, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21

50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate

2003 · A. Vandooren, S. Egley, et al. · IEEE Transactions on Nanotechnology · 15

Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability

2006 · R.I. Hegde, D.H. Triyoso, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12

ALD HfO/sub 2/ using heavy water (D/sub 2/O) for improved MOSFET stability

2004 · H.-H. Tseng, M.E. Ramon, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 7

Performance and reliability of sub-100nm TaSiN metal gate fully-depleted SOI devices with high-k (HfO/sub 2/) gate dielectric

2004 · A.V.-Y. Thean, A. Vandooren, et al. · Symposium on VLSI Technology · 7

LASER Anneal to Enable Ultimate CMOS Scaling with PMOS Band Edge Metal Gate/High-K Stacks

2006 · D.C. Gilmer, J.K. Schaeffer, et al. · European Solid-State Device Research Conference · 6

Investigations of Metal Gate Electrodes on HfO2 Gate Dielectrics

2004 · Jamie Schaeffer, Sri Samavedam, et al. · MRS Proceedings · 5

Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability

2007 · R. I. Hegde, D. H. Triyoso, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3

Challenges for PMOS Metal Gate Electrodes and Solutions for Low Power Applications

2007 · J.K. Schaeffer, W.J. Taylor, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3

Works count: 27

Citation count: 1,512

H-index: 17

I10-index: 19