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Jose A. Maiz

A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging
2007 · K. Mistry, R. Chau, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 859
Characterization of multi-bit soft error events in advanced SRAMs
2004 · J. Maiz, S. Hareland, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 249
Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices
2006 · N. Seifert, P. Slankard, et al. · IEEE International Reliability Physics Symposium proceedings · 212
Influence of phonon, geometry, impurity, and grain size on Copper line resistivity
2006 · J. J. Plombon, Ebrahim Andideh, et al. · Applied Physics Letters · 154
Neutron soft error rate measurements in a 90-nm CMOS process and scaling trends in SRAM from 0.25-μm to 90-nm generation
2004 · P. Hazucha, T. Karnik, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 152
Cross-sectional nanoindentation: a new technique for thin film interfacial adhesion characterization
1999 · J.M. Sánchez, S. El-Mansy, et al. · Acta Materialia · 133
BTI reliability of 45 nm high-K + metal-gate process technology
2008 · S. Pae, M. Agostinelli, et al. · IEEE International Reliability Physics Symposium proceedings · 132
Impact of CMOS process scaling and SOI on the soft error rates of logic processes
2002 · S. Hareland, J. Maiz, et al. · Symposium on VLSI Technology · 124
Measurements and analysis of SER-tolerant latch in a 90-nm dual-V/sub T/ CMOS process
2004 · P. Hazucha, T. Karnik, et al. · IEEE Journal of Solid-State Circuits · 111
Crystal plasticity in Cu damascene interconnect lines undergoing electromigration as revealed by synchrotron x-ray microdiffraction
2006 · A. S. Budiman, W. D. Nix, et al. · Applied Physics Letters · 102
A high performance 180 nm generation logic technology
2002 · S. Yang, S. Ahmed, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 86
Effect of BTI Degradation on Transistor Variability Advanced Semiconductor Technologies
2008 · Sangwoo Pae, Jose Maiz, et al. · IEEE Transactions on Device and Materials Reliability · 84
Isothermal stress relaxation in electroplated Cu films. I. Mass transport measurements
2005 · Dongwen Gan, Paul S. Ho, et al. · Journal of Applied Physics · 74
Characterization of electromigration under bidirectional (BC) and pulsed unidirectional (PDC) currents
2003 · J.A. Maiz · IEEE International Reliability Physics Symposium proceedings · 74
Measurements and analysis of SER tolerant latch in a 90 nm dual-Vt CMOS process
2004 · P. Hazucha, T. Karnik, et al. · Custom Integrated Circuits Conference · 66
Effect of passivation on stress relaxation in electroplated copper films
2006 · Dongwen Gan, Paul S. Ho, et al. · Journal of materials research/Pratt's guide to venture capital sources · 47
In situ observations of dc and ac electromigration in passivated Al lines
1991 · E. Castaño, J. Maiz, et al. · Applied Physics Letters · 40
Electromigration lifetime and critical void volume
2004 · Jun He, Z. Suo, et al. · Applied Physics Letters · 39
Dielectric breakdown in a 45 nm high-k/metal gate process technology
2008 · C. Prasad, M. Agostinelli, et al. · IEEE International Reliability Physics Symposium proceedings · 27
Characterization of Electromigration under Bidirectional (BC) and Pulsed Unidirectional (PDC) Currents
1989 · J.A. Maiz · IEEE International Reliability Physics Symposium proceedings · 18
A Resistance Change Methodology for the Study of Electromigration in Al-Si Interconnects
1988 · J.A. Maiz, I. Segura · IEEE International Reliability Physics Symposium proceedings · 17
Adhesion studies in integrated circuit interconnect structures
2006 · J.M. Molina-Aldareguia, I. Ocaña, et al. · Engineering Failure Analysis · 15
Impact of body bias on alpha- and neutron-induced soft error rates of flip-flops
2004 · T. Karnik, J. Tschanz, et al. · Symposium on VLSI Circuits · 15
Alpha-SER modeling and simulation for sub-0.25 /spl mu/m CMOS technology
1999 · Changhong Dai, N. Hakim, et al. · Symposium on VLSI Technology · 14
Electromigration Testing of Ti/Al-Si Metallization for Integrated Circuits
1987 · Jose A. Maiz, Babak Sabi · IEEE International Reliability Physics Symposium proceedings · 14
Works count: 43
Citation count: 2,931
H-index: 19
I10-index: 29
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